EMD4DXV6T1G

The EMD4DXV6T1G is a dual bias resistor transistor (BRT) from On Semiconductor, combining one NPN and one PNP pre-biased transistor in a single SOT-563 surface-mount package. Each transistor integrates a monolithic bias network consisting of a series base resistor (R1, 47kΩ) and a base-emitter resistor, eliminating the need for external bias components and simplifying circuit design.

Maximum ratings common to both transistors: collector-base voltage 50V, collector-emitter voltage 50V, collector current 100mA. Total device dissipation is 357mW when one junction is heated on an FR-4 board at 25°C ambient, with a derating factor of 2.9mW/°C above 25°C. Thermal resistance junction-to-ambient is 250°C/W or 350°C/W depending on conditions. DC current gain (hFE) is minimum 80 at Ic=5mA, Vce=10V. Collector-emitter saturation voltage is 250mV maximum at Ib=300µA, Ic=10mA.

The device is designed for low-power surface-mount applications where board space is at a premium. The SOT-563 package is ideal for portable electronics, IoT devices, and other space-constrained designs. The EMD4DXV6T1G is Pb-Free and indicated as RoHS3 compliant. Tape and reel packaging is available with 4000 units per reel for the T1G suffix.