| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,150 pcs
|
7150 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The EMD29T2R is a dual NPN/PNP pre-biased transistor array manufactured by ROHM Semiconductor. It integrates one NPN and one PNP transistor with built-in bias resistors, simplifying circuit design by reducing external component count. The NPN transistor is rated for a maximum collector-emitter voltage of 50V and a collector current of 100mA, while the PNP transistor is rated for 12V and 500mA. Total power dissipation is 120mW. The device is housed in a compact EMT6 surface-mount package, suitable for space-constrained applications. Typical transition frequencies are 250MHz for the NPN and 260MHz for the PNP, with minimum DC current gains of 30 (NPN at 5mA, 5V) and 140 (PNP at 100mA, 2V). The built-in base resistor (R1) is 10kΩ. This array is ideal for switching and amplifier circuits where matched NPN/PNP pairs are needed.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.62 | $0.62 |
| 10+ | $0.38 | $0.38 |
| 100+ | $0.24 | $0.24 |
| 500+ | $0.18 | $0.18 |
| 1,000+ | $0.16 | $0.16 |
| 2,000+ | $0.15 | $0.15 |
| 8,000+ | $0.12 | $0.12 |
| 16,000+ | $0.11 | $0.11 |
| 24,000+ | $0.11 | $0.11 |
| 40,000+ | $0.10 | $0.10 |
| 56,000+ | $0.10 | $0.10 |
| 80,000+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NPN transistor has a maximum collector-emitter voltage of 50V.
The PNP transistor has a maximum collector current of 500mA.
The total power dissipation is 120mW.
The EMD29T2R is available in an EMT6 surface-mount package.
The built-in base resistor (R1) is 10kΩ.
The NPN transistor has a typical transition frequency of 250MHz.
The PNP transistor has a minimum DC current gain of 140 at Ic=100mA, Vce=2V.