EMD12T2R The EMD12T2R is a dual NPN/PNP pre-biased transistor array from ROHM Semiconductor. It features a maximum power dissipation of 150mW and is housed in a surface-mount SOT-563 or SOT-666 package.
Mfr Part #:

EMD12T2R

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The EMD12T2R is a dual NPN/PNP pre-biased transistor array from ROHM Semiconductor. It features a maximum power dissipation of 150mW and is housed in a surface-mount SOT-563 or SOT-666 package.
✓ Total Stock: 8,125 pcs
$ Price Range: $0.09 - $0.56

EMD12T2R Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
8,125 pcs
8125 pcs On Request 1 On Request On Request 1116+ On Request On Request

EMD12T2R Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

EMD12T2R Description

Short technical summary and product information.

The EMD12T2R from ROHM Semiconductor is a dual transistor array containing one NPN and one PNP pre-biased transistor in a single surface-mount package. Pre-biased transistors integrate bias resistors directly into the device, reducing external component count and simplifying circuit design.

 

This device is rated for a maximum collector-emitter voltage of 50V and a maximum collector current of 100mA, with a power dissipation of 150mW. It offers a minimum DC current gain (hFE) of 68 at 5mA and a transition frequency of 250 MHz, making it suitable for switching and signal processing applications.

 

The EMD12T2R is available in SOT-563 or SOT-666 packages, with the supplier device package designated as EMT6. It is designed for surface-mount assembly, supporting compact and high-density PCB layouts.

EMD12T2R Quick Information

Product Type: Pre-Biased Dual Transistor Array
Canonical Name: EMD12T2R Dual NPN/PNP Pre-Biased Transistor
Subcategory: Pre-Biased Dual Transistor

EMD12T2R Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

EMD12T2R Estimated Pricing

Qty Low High
1+ $0.56 $0.56
10+ $0.35 $0.35
100+ $0.22 $0.22
500+ $0.17 $0.17
1,000+ $0.15 $0.15
2,000+ $0.13 $0.13
8,000+ $0.11 $0.11
16,000+ $0.10 $0.10
24,000+ $0.10 $0.10
40,000+ $0.09 $0.09
56,000+ $0.09 $0.09
80,000+ $0.09 $0.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

EMD12T2R Features

  • Dual NPN and PNP pre-biased transistors.
  • Maximum collector-emitter voltage of 50V.
  • Maximum collector current of 100mA.
  • Power dissipation rated at 150mW.
  • Surface-mount SOT-563 or SOT-666 package.

EMD12T2R Applications

  • Ideal for low-power switching circuits.
  • Used in signal amplification stages.
  • Suitable for compact portable electronics.
  • Reduces external component count in designs.

EMD12T2R FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the EMD12T2R?

The maximum collector-emitter voltage is 50V.

What is the maximum collector current rating?

The maximum collector current is 100mA.

What is the power dissipation of this transistor array?

The maximum power dissipation is 150mW.

What package types are available for the EMD12T2R?

The device is available in SOT-563 and SOT-666 packages, with a supplier device package of EMT6.

Is the EMD12T2R RoHS compliant?

Yes, it is listed as RoHS3 Compliant.

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain (hFE) is 68 at Ic=5mA and Vce=5V.

What is the transition frequency of the EMD12T2R?

The transition frequency is 250 MHz.

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