EMC5DXV5T1G The EMC5DXV5T1G is a dual complementary pre-biased bipolar transistor array from onsemi, housing one NPN and one PNP transistor with integrated bias resistors in a single SOT-553 package. It features a maximum collector-emitter voltage of 50V, a maximum collector current of 100mA, and a total power dissipation of 500mW.
Mfr Part #:

EMC5DXV5T1G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The EMC5DXV5T1G is a dual complementary pre-biased bipolar transistor array from onsemi, housing one NPN and one PNP transistor with integrated bias resistors in a single SOT-553 package. It features a maximum collector-emitter voltage of 50V, a maximum collector current of 100mA, and a total power dissipation of 500mW.
✓ Total Stock: 67,985 pcs
$ Price Range: $0.10 - $0.53

EMC5DXV5T1G Available from 5 distributors

✓ Authorised
✓ Non-Authorised

EMC5DXV5T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

EMC5DXV5T1G Description

Short technical summary and product information.

The EMC5DXV5T1G is a dual complementary Bias Resistor Transistor (BRT) from onsemi, integrating one NPN and one PNP transistor with monolithic bias resistor networks in a single SOT-553 surface-mount package. This device simplifies circuit design by eliminating external resistor components, reducing board space and component count.

 

Each transistor features a maximum collector-emitter voltage of 50V and a maximum collector current of 100mA. The NPN transistor (Q2) has integrated series base resistor R1 of 47kΩ and base-emitter resistor R2 of 47kΩ. The PNP transistor (Q1) has R1 of 4.7kΩ and R2 of 10kΩ. The total device power dissipation is 500mW when both junctions are heated at 25°C ambient.

 

The device is housed in the space-saving SOT-553 package, ideal for low-power surface-mount applications. It is supplied in tape and reel packaging with 4000 pieces per reel. The EMC5DXV5T1G is Pb-Free and RoHS compliant.

EMC5DXV5T1G Quick Information

Product Type: Pre-Biased Bipolar Transistor Array
Series: EMC5DXV5T1G
Canonical Name: EMC5DXV5T1G Dual Complementary Pre-Biased Bipolar Transistor Array
Subcategory: Arrays, Pre-Biased

EMC5DXV5T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

EMC5DXV5T1G Estimated Pricing

Qty Low High
1+ $0.53 $0.53
10+ $0.33 $0.33
100+ $0.21 $0.21
500+ $0.16 $0.16
1,000+ $0.14 $0.14
2,000+ $0.12 $0.12
4,000+ $0.11 $0.11
8,000+ $0.10 $0.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

EMC5DXV5T1G Features

  • Dual complementary NPN/PNP pre-biased transistors.
  • Integrated bias resistors reduce external component count.
  • Maximum collector-emitter voltage rating of 50V.
  • Maximum collector current rating of 100mA.
  • Compact SOT-553 surface-mount package.

EMC5DXV5T1G Applications

  • Ideal for space-constrained low-power switching circuits.
  • Suitable for digital transistor replacement in interface designs.
  • Used in portable and battery-powered electronic devices.
  • Applicable in general-purpose signal inversion and level shifting.

EMC5DXV5T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the EMC5DXV5T1G?

The maximum collector-emitter voltage (VCEO) is 50V for both the NPN and PNP transistors.

What is the package type for the EMC5DXV5T1G?

The EMC5DXV5T1G is housed in a SOT-553 surface-mount package.

Is the EMC5DXV5T1G RoHS compliant?

The EMC5DXV5T1G is listed as RoHS3 Compliant and is Pb-Free per the datasheet.

What are the integrated resistor values for the PNP transistor (Q1)?

For the PNP transistor (Q1), the series base resistor R1 is 4.7kΩ and the base-emitter resistor R2 is 10kΩ.

What is the total power dissipation of the EMC5DXV5T1G?

The total power dissipation is 500mW when both junctions are heated at 25°C ambient.

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