| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,000 pcs
|
16000 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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| Resistor | |
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The EMB9T2R from ROHM Semiconductor is a dual PNP pre-biased transistor array designed for space-constrained applications requiring two matched transistors in a single package. Each transistor includes integrated bias resistors, simplifying circuit design by reducing external component count.
Key electrical specifications include a collector-emitter voltage (Vceo) of 50V, a collector current (Ic) rating of 100mA, and a power dissipation of 150mW. The device offers a minimum DC current gain (hFE) of 68 at 5mA collector current and 5V Vce, with a maximum Vce saturation voltage of 300mV at 250µA base current and 5mA collector current. The transition frequency (fT) is 250 MHz.
The EMB9T2R is housed in a surface-mount SOT-563 package (also compatible with SOT-666), with a supplier device package designation of EMT6. This compact package is suitable for automated assembly in high-volume manufacturing.
| Qty | Low | High |
|---|---|---|
| 8,000+ | $0.10 | $0.10 |
| 16,000+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vceo) is 50V.
The maximum collector current (Ic) is 100 mA.
The power dissipation is 150 mW.
The EMB9T2R is available in a surface-mount SOT-563 package (also compatible with SOT-666), with a supplier device package of EMT6.
The minimum DC current gain (hFE) is 68 at Ic=5mA and Vce=5V.
The base resistor value is 47 kΩ.
The EMB9T2R is listed as RoHS3 Compliant, though this status is unverified.