| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,650 pcs
|
7650 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance |
The EMB32A03G is a Dual Channel N-Channel MOSFET manufactured by Excelliance MOS. This component is designed for special purpose applications and comes in a SOP-8 package.
Key electrical specifications include a Drain-Source Breakdown Voltage of 30V and a continuous Drain Current (ID(ON)) of 6.5A. The On-Resistance (RDS(ON)) is specified at a maximum of 32 mΩ at VGS = 10V and 60 mΩ at VGS = 4.5V. Input capacitance (Ciss) is typically 323 pF, and reverse transfer capacitance (Crss) is typically 53 pF.
This MOSFET is suitable for various electronic designs requiring efficient switching and power management. Its specifications make it a versatile component for applications within the scope of its capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The maximum continuous drain current is 6.5A.
It is packaged in an SOP-8 case.
The gate-source voltage is ±20V.
The maximum gate-source threshold voltage is 3V.