| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,110 pcs
|
2110 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request | |
|
1,383 pcs
|
1383 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| FET Type | |
| Power Dissipation | |
| Voltage |
The EMC EMB20N03V is an N Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 12A at 25°C.
The MOSFET has a typical gate threshold voltage of 3V at 250uA and a maximum drain-source on-resistance of 20mOhms at 8A and 10V gate-source voltage. The maximum power dissipation is rated at 21W at 25°C.
This component is housed in an EDFN3*3 package, suitable for surface mounting. Its specifications make it a versatile choice for power switching and amplification circuits where efficient current handling and low on-resistance are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 30V.
The continuous drain current is 12A at 25°C.
The gate threshold voltage is 3V at 250uA.
The maximum drain source on-resistance is 20 mOhms at 8A and 10V.
The package type is EDFN3*3.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.