| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,291 pcs
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12291 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,512 pcs
|
4512 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Texas Instruments EMB1412MYE/NOPB is a MOSFET gate driver designed for high-frequency operation. It features a compound output driver stage with MOS and bipolar transistors operating in parallel, capable of sinking more than 7-A peak current into capacitive loads. This design reduces drive current variation with voltage and temperature.
Key electrical specifications include a supply voltage range of 3.5V to 14V, logic voltages of 0.8V and 2.3V, and a peak output current of 7A sink and 3A source. The device offers fast propagation times of 25 ns typical and fast rise/fall times of 14 ns/12 ns with a 2 nF load. It supports both inverting and non-inverting inputs, providing flexibility for different configurations.
The EMB1412MYE/NOPB operates within a temperature range of -40°C to 125°C (TJ). It is housed in an 8-pin HVSSOP package, suitable for surface mounting. Under-voltage lockout protection is included to prevent MOSFET damage from insufficient gate turn-on voltage. The device is classified as a cell monitor and balancer.
This gate driver is suitable for applications requiring robust gate drive capabilities for MOSFETs. Its features make it a versatile component for power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.90 | $2.90 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-40°C to 125°C (TJ).
3.5V to 14V.
8-HVSSOP (also described as 8-PowerTSSOP, 8-MSOP).
3A source and 7A sink.
IGBT, N-channel MOSFET, and P-channel MOSFET.
Rise time 14ns, fall time 12ns with a 2nF load.