| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
376 pcs
|
376 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The EMB10T2R is a dual PNP pre-biased transistor array manufactured by ROHM Semiconductor. It integrates two PNP transistors with built-in bias resistors, simplifying circuit design and reducing component count. Key electrical specifications include a maximum collector-emitter breakdown voltage of 50V, a maximum collector current of 100mA, and a maximum power dissipation of 150mW. The device offers a minimum DC current gain (hFE) of 80 at 10mA collector current and 5V collector-emitter voltage, and a transition frequency of 250MHz. It is housed in a surface-mount SOT-563 or SOT-666 package with an EMT6 supplier package designation, making it suitable for compact PCB layouts. This pre-biased transistor array is designed for general-purpose switching and amplification applications where space and component count are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.56 | $0.56 |
| 10+ | $0.35 | $0.35 |
| 100+ | $0.22 | $0.22 |
| 500+ | $0.17 | $0.17 |
| 1,000+ | $0.15 | $0.15 |
| 2,000+ | $0.13 | $0.13 |
| 8,000+ | $0.11 | $0.11 |
| 16,000+ | $0.10 | $0.10 |
| 24,000+ | $0.10 | $0.10 |
| 40,000+ | $0.09 | $0.09 |
| 56,000+ | $0.09 | $0.09 |
| 80,000+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 50V.
The maximum collector current (Ic) is 100mA.
The EMB10T2R is available in SOT-563, SOT-666 packages with an EMT6 supplier device package.
The maximum power dissipation is 150mW.
The minimum DC current gain is 80 at Ic=10mA and Vce=5V.
RoHS3 compliance status is unverified but marked as compliant in the database.
The MSL is rated as 1 (unlimited), though this is unverified.