EMB09N03HR The EMB09N03HR is an N-Channel Logic Level Enhancement Mode Field Effect Transistor from EMC. It offers a 30V breakdown voltage and a low on-resistance.
Mfr Part #:

EMB09N03HR

Available from 3 distributors
Mfr Name: EMC
EMC
The EMB09N03HR is an N-Channel Logic Level Enhancement Mode Field Effect Transistor from EMC. It offers a 30V breakdown voltage and a low on-resistance.
✓ Total Stock: 12,187 pcs
$ Price Range: $0.99

EMB09N03HR Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,565 pcs
5565 pcs On Request 1 On Request On Request 10+ On Request On Request
Non-Authorised Inventory information
4,122 pcs
4122 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request 13+ On Request On Request

EMB09N03HR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Input Capacitance
Storage Temperature
Tape & Reel

EMB09N03HR Description

Short technical summary and product information.

The EMB09N03HR is an N-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by EMC. It features a drain-source breakdown voltage of 30V and a maximum continuous drain current of 50A at 25°C.

 

Key electrical characteristics include a low drain-source on-state resistance (RDS(ON)) of 9.5mΩ maximum at VGS = 10V and ID = 25A, and 14mΩ maximum at VGS = 4.5V and ID = 15A. The gate threshold voltage (VGS(th)) is typically 1.7V, with a maximum of 3V. Dynamic characteristics include an input capacitance (Ciss) of 992pF typical and a total gate charge (Qg) of 17.8nC typical at VGS = 10V.

 

This MOSFET is supplied in an EDFN5X6 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C. The device is RoHS, Halogen Free, and TSCA compliant.

 

Applications for the EMB09N03HR include power switching, motor control, and battery management systems where efficient and reliable performance is required.

EMB09N03HR Quick Information

Product Type: MOSFET
Canonical Name: EMB09N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor
Subcategory: N-Channel MOSFET

EMB09N03HR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

EMB09N03HR Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

EMB09N03HR Features

  • 30V Drain-Source Breakdown Voltage
  • 50A Continuous Drain Current
  • 9.5mΩ Max Rds(on) at 10V
  • Logic Level Gate Drive
  • EDFN5X6 Package

EMB09N03HR Applications

  • Power switching applications
  • Motor control circuits
  • Battery management systems
  • DC-DC converters

EMB09N03HR FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current for the EMB09N03HR?

The maximum continuous drain current is 50A at 25°C.

What is the maximum drain-source on-state resistance?

The maximum drain-source on-state resistance is 9.5mΩ at VGS = 10V and ID = 25A.

What is the breakdown voltage of the EMB09N03HR?

The drain-source breakdown voltage is 30V.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the EMB09N03HR available in?

The EMB09N03HR is available in an EDFN5X6 package.

Is the EMB09N03HR RoHS compliant?

Yes, the EMB09N03HR is RoHS3 Compliant.

Is the EMB09N03HR Halogen Free?

Yes, the EMB09N03HR is Halogen Free.

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