| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
376 pcs
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376 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance |
The EMB08N06A is an N-Channel Power MOSFET manufactured by Excelliance MOS. It is designed for various power applications, offering a maximum drain-source voltage of 60V and a continuous drain current of 60A.
Key electrical characteristics include a gate-source threshold voltage of 3V maximum and low on-state resistance. The Rds(on) is specified at 8mΩ maximum when Vgs is 10V, and 14mΩ maximum when Vgs is 4.5V. Input capacitance (Ciss) is typically 2869pF, and reverse transfer capacitance (Crss) is typically 68pF.
This MOSFET is supplied in a TO252-2 package, suitable for surface-mount applications. Its specifications make it a suitable component for power switching and control circuits in applications such as power supplies, battery management systems, and power tools.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The continuous drain current rating is 60A.
The Rds(on) is a maximum of 8mΩ at Vgs = 10V.
The Rds(on) is a maximum of 14mΩ at Vgs = 4.5V.
The EMB08N06A is available in a TO252-2 package.