| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,484 pcs
|
6484 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
129 pcs
|
129 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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| Input Capacitance | |
| Tape & Reel |
The EMB06N03HR is an N-Channel Power MOSFET manufactured by EMC. It is designed for various power switching applications and comes in an EDFN5X6 package.
Key electrical specifications include a Drain-Source Breakdown Voltage of 30V and a maximum Gate-Source Voltage of ±20V. The Gate-Source Threshold Voltage is rated at a maximum of 3V. This MOSFET can handle a continuous drain current of 95A at Vgs = 10V. The on-resistance (Rds(on)) is a maximum of 6 mΩ at Vgs = 10V and 9 mΩ at Vgs = 4.5V, indicating efficient power handling.
Capacitance values include a typical input capacitance (Ciss) of 1270 pF and a typical reverse transfer capacitance (Crss) of 106 pF. The component is configured as a single channel device.
This MOSFET is suitable for applications requiring efficient power switching and management. Its specifications make it a viable option for power supplies, battery management systems, and power tool applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current (Id) for the EMB06N03HR is 95A when the gate-source voltage (Vgs) is 10V.
The maximum Drain-Source On-Resistance (Rds(on)) for the EMB06N03HR at Vgs = 10V is 6 mΩ.
The Drain-Source Breakdown Voltage (Vds(BR)) for the EMB06N03HR is 30V.
The EMB06N03HR is available in the EDFN5X6 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.