| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,100 pcs
|
11100 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| SVHC Present |
The EMB06N03G is an N-Channel Power MOSFET manufactured by EMC. It offers a drain-source breakdown voltage of 30V and a continuous drain current of up to 18A. The MOSFET exhibits low on-resistance, with a maximum of 6mΩ at a gate-source voltage of 10V and 9.5mΩ at 4.5V, making it suitable for efficient power switching.
This component is supplied in a standard SOP-8 package, facilitating surface-mount assembly. Key electrical characteristics include a gate-source voltage rating of ±20V and a gate-source threshold voltage of 3V maximum. Input capacitance (Ciss) is typically 1983pF, and reverse transfer capacitance (Crss) is typically 287pF.
The EMB06N03G is designed for applications requiring reliable power control and switching. Its specifications make it a suitable choice for power supplies, battery management systems, and other power electronics circuits where efficient operation and compact packaging are essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current for the EMB06N03G is 18A.
The drain-source breakdown voltage of the EMB06N03G is 30V.
The EMB06N03G MOSFET is supplied in a SOP-8 package.
The EMB06N03G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the EMB06N03G is 1 Unlimited.