EMB03N03V The EMB03N03V is a single N-channel MOSFET from Excelliance MOS Corporation, designed for logic-level enhancement mode operation. It offers a 30V breakdown voltage and low on-resistance.
Mfr Part #:

EMB03N03V

Available from 1 distributors
Mfr Name: EXCELLIANCE MOS CORPORATION
EXCELLIANCE MOS CORPORATION
The EMB03N03V is a single N-channel MOSFET from Excelliance MOS Corporation, designed for logic-level enhancement mode operation. It offers a 30V breakdown voltage and low on-resistance.
✓ Total Stock: 4,567 pcs
$ Price Range: $0.99

EMB03N03V Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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4,567 pcs
4567 pcs On Request 1 On Request On Request 21+ On Request On Request

EMB03N03V Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Forward Voltage
Halogen Free
Industrial Grade
Input Capacitance
Medical Grade
Military Grade
Reverse Recovery Time
Storage Temperature
Tape & Reel

EMB03N03V Description

Short technical summary and product information.

The EMB03N03V is a single N-channel MOSFET manufactured by Excelliance MOS Corporation. It operates as a logic-level enhancement mode field-effect transistor with a maximum drain-source breakdown voltage of 30V. The device features a low on-state resistance, with a maximum of 3mΩ at VGS=10V and ID=18A, and 4mΩ at VGS=4.5V and ID=14A. It can handle a continuous drain current of up to 74A at 25°C case temperature and 55A at 25°C ambient temperature.

 

This MOSFET is designed for efficient power switching applications. Key electrical characteristics include a gate threshold voltage typically around 1.5V and a gate-body leakage of ±100nA. Dynamic characteristics such as input capacitance (Ciss) are 2462pF, output capacitance (Coss) are 358pF, and reverse transfer capacitance (Crss) are 217pF, all measured at 1MHz.

 

The EMB03N03V is available in a TO-220-3 package. It is specified as Pb-Free and Halogen Free, indicating compliance with environmental standards. The operating junction and storage temperature range is from -55°C to 150°C.

EMB03N03V Quick Information

Product Type: MOSFET
Canonical Name: EMB03N03V Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Subcategory: N-Channel MOSFET

EMB03N03V Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

EMB03N03V Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

EMB03N03V Features

  • Single N-Channel MOSFET
  • 30V Drain-Source Breakdown Voltage
  • 3mΩ Max On-State Resistance
  • 74A Continuous Drain Current
  • Pb-Free and Halogen Free

EMB03N03V Applications

  • Suitable for high-current switching applications.
  • Used in power supply and motor control circuits.
  • Ideal for load switching in industrial equipment.
  • Applicable in DC-DC converter designs.
  • Suitable for high-speed switching in power modules.

EMB03N03V FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source breakdown voltage for the EMB03N03V?

The maximum drain-source breakdown voltage is 30V.

What is the typical gate threshold voltage of the EMB03N03V MOSFET?

The typical gate threshold voltage is 1.5V.

What is the maximum on-state resistance (RDS(ON)) for the EMB03N03V at VGS=10V?

The maximum on-state resistance at VGS=10V is 3mΩ.

What is the continuous drain current rating for the EMB03N03V at 25°C case temperature?

The continuous drain current rating is 74A at 25°C case temperature.

What is the operating temperature range for the EMB03N03V?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the EMB03N03V MOSFET supplied in?

The EMB03N03V is supplied in a TO-220-3 package.

Is the EMB03N03V RoHS compliant?

The RoHS status is RoHS3 Compliant.

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