| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,024 pcs
|
10024 pcs | On Request | 1 | On Request | On Request | 1127+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The EMA8T2R from ROHM Semiconductor is a dual PNP pre-biased bipolar junction transistor array designed for space-efficient switching and amplification applications. Each transistor integrates a 47kΩ base resistor, reducing external component count and simplifying PCB layout.
Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 50V, a maximum collector current (Ic) of 100mA, and a power dissipation (Pd) of 300mW. The minimum DC current gain (hFE) is 68 at Ic=5mA and Vce=5V, with a maximum saturation voltage (Vce(sat)) of 300mV at Ib=500µA and Ic=10mA.
The device is housed in a compact 6-SMD (5 leads) flat lead package (EMT5), suitable for automated surface mount assembly. It is ideal for applications where board space is limited and multiple transistor functions are required.
| Qty | Low | High |
|---|---|---|
| 8,000+ | $0.10 | $0.10 |
| 16,000+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (Vceo) is 50V.
The maximum collector current (Ic) is 100mA.
The EMA8T2R is available in a 6-SMD (5 leads) flat lead package, designated as EMT5.
Yes, each PNP transistor has an integrated 47kΩ base resistor.
The minimum DC current gain (hFE) is 68 at Ic=5mA and Vce=5V.
The maximum saturation voltage (Vce(sat)) is 300mV at Ib=500µA and Ic=10mA.
The EMA8T2R is listed as RoHS3 compliant, though this is unverified.