EM6M2T2R EM6M2T2R is a 20V, 200mA dual N and P-Channel MOSFET in a surface mount EMT6 package, featuring logic level gate drive and a maximum Rds(on) of 1 Ohm.
Mfr Part #:

EM6M2T2R

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
EM6M2T2R is a 20V, 200mA dual N and P-Channel MOSFET in a surface mount EMT6 package, featuring logic level gate drive and a maximum Rds(on) of 1 Ohm.
✓ Total Stock: 3,736 pcs
$ Price Range: $0.17 - $0.89

EM6M2T2R Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,736 pcs
3736 pcs On Request 1 On Request On Request 18+ On Request On Request

EM6M2T2R Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

EM6M2T2R Description

Short technical summary and product information.

The EM6M2T2R from ROHM Semiconductor is a dual MOSFET array integrating both an N-Channel and a P-Channel enhancement-mode transistor in a single compact SOT-563 / SOT-666 package. It is designed for low-power switching and load management applications where board space is at a premium.

 

With a drain-to-source voltage rating of 20V and continuous drain current capability of 200mA, this device suits a variety of low-voltage logic-level loads. The maximum on-resistance is 1 Ohm at a gate-source voltage of 4V and 200mA drain current, ensuring efficient conduction in small-signal applications.

 

Key electrical characteristics include a maximum gate threshold voltage of 1V (at Id=1mA), input capacitance of 25 pF maximum (at Vds=10V), and a logic level gate feature enabling direct drive from low-voltage logic outputs. The junction operating temperature is rated up to 150°C with a maximum power dissipation of 150mW.

 

The device is supplied in the surface mount EMT6 package (supplier device package designation) and is RoHS3 compliant and REACH unaffected. It is suitable for automated assembly and compact PCB layouts.

EM6M2T2R Quick Information

Product Type: MOSFET Array
Canonical Name: EM6M2T2R - MOSFET N and P-Channel 20V 200mA Surface Mount EMT6
Subcategory: MOSFET - Arrays

EM6M2T2R Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

EM6M2T2R Estimated Pricing

Qty Low High
1+ $0.89 $0.89
10+ $0.56 $0.56
50+ $0.41 $0.41
100+ $0.36 $0.36
500+ $0.27 $0.27
8,000+ $0.19 $0.19
24,000+ $0.17 $0.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

EM6M2T2R Features

  • Dual N and P-Channel MOSFET array.
  • 20V drain-source voltage rating.
  • 200mA continuous drain current.
  • 1 Ohm maximum on-resistance.
  • Logic level gate for low-voltage drive.

EM6M2T2R Applications

  • Load switching in portable electronics.
  • Signal routing in small-signal circuits.
  • Battery power management in IoT devices.
  • Level shifting between logic domains.

EM6M2T2R FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the EM6M2T2R?

The EM6M2T2R is rated for a maximum drain-to-source voltage (Vdss) of 20V.

What is the maximum continuous drain current?

The maximum continuous drain current is 200mA.

What is the package type for the EM6M2T2R?

The device is available in SOT-563 and SOT-666 packages, with the supplier device package designated as EMT6.

What is the operating temperature range?

The maximum junction operating temperature is 150°C.

Is the EM6M2T2R RoHS compliant?

Yes, it is listed as RoHS3 Compliant, though this status is unverified.

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