| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,760 pcs
|
4760 pcs | On Request | 1 | On Request | On Request | 1346+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The EM6K6T2R from ROHM Semiconductor is a dual N-Channel MOSFET array designed for surface-mount applications. It features two independent N-Channel MOSFETs in a single package, with a drain-to-source voltage rating of 20V and continuous drain current of 300mA.
The device offers a maximum on-resistance of 1 Ohm at a gate-source voltage of 4V and drain current of 300mA, with a maximum threshold voltage of 1V at 1mA. Input capacitance is typically 25pF at 10V drain-source voltage. The logic-level gate feature allows direct interfacing with low-voltage control signals. Total power dissipation is 150mW, and the junction operating temperature is rated up to 150°C.
Packaged in an EMT6 surface-mount package (compatible with SOT-563 and SOT-666 footprints), the EM6K6T2R is suitable for space-constrained circuit boards. The dual MOSFET configuration simplifies board layout in applications requiring two switching elements with matched characteristics.
With its low voltage and moderate current rating, the EM6K6T2R is suited for load switching, signal switching, and level-shifting circuits in portable and battery-powered electronics. The surface-mount package supports automated assembly for high-volume manufacturing.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.66 | $0.66 |
| 10+ | $0.41 | $0.41 |
| 50+ | $0.30 | $0.30 |
| 100+ | $0.26 | $0.26 |
| 500+ | $0.20 | $0.20 |
| 8,000+ | $0.13 | $0.13 |
| 24,000+ | $0.12 | $0.12 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 20V.
The EM6K6T2R is available in SOT-563 and SOT-666 packages, with the EMT6 supplier device package.
The maximum junction operating temperature is 150°C.
The EM6K6T2R is listed as RoHS3 compliant.
Maximum on-resistance is 1 Ohm at 300mA drain current and 4V gate-source voltage.
Maximum gate threshold voltage is 1V at a drain current of 1mA.
Yes, it features a logic-level gate, allowing direct drive from low-voltage logic signals.