EM6K34T2CR Dual N-Channel MOSFET from ROHM Semiconductor, rated for 50V drain-source voltage and 200mA continuous drain current. Features logic level gate drive and low on-resistance of 2.2 Ohm.
Mfr Part #:

EM6K34T2CR

Available from 3 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
Dual N-Channel MOSFET from ROHM Semiconductor, rated for 50V drain-source voltage and 200mA continuous drain current. Features logic level gate drive and low on-resistance of 2.2 Ohm.
✓ Total Stock: 3,901 pcs
$ Price Range: $0.07 - $0.44

EM6K34T2CR Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,942 pcs
1942 pcs On Request 1 On Request On Request 17+ On Request On Request
Non-Authorised Inventory information
1,556 pcs
1556 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
403 pcs
403 pcs On Request 1 On Request On Request 17+ On Request On Request

EM6K34T2CR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

EM6K34T2CR Description

Short technical summary and product information.

The EM6K34T2CR is a dual N-Channel MOSFET from ROHM Semiconductor, designed for surface mount applications. It features a drain-source voltage rating of 50V and a continuous drain current of 200mA. The device offers a maximum on-resistance of 2.2 Ohm at 200mA and 4.5V gate drive, with a logic level gate threshold of 0.8V at 1mA. Input capacitance is 26pF at 10V Vds. The MOSFET is housed in a compact SOT-563 or SOT-666 package with an EMT6 supplier device package. It supports a maximum power dissipation of 120mW and an operating junction temperature up to 150°C. The logic level gate feature allows direct drive from low-voltage logic circuits. This dual MOSFET array is suitable for switching and amplification in space-constrained designs.

EM6K34T2CR Quick Information

Product Type: MOSFET Array
Canonical Name: ROHM Semiconductor EM6K34T2CR Dual N-Channel MOSFET, 50V, 0.2A, EMT6
Subcategory: Dual N-Channel MOSFET

EM6K34T2CR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

EM6K34T2CR Estimated Pricing

Qty Low High
1+ $0.44 $0.44
10+ $0.27 $0.27
50+ $0.19 $0.19
100+ $0.17 $0.17
500+ $0.13 $0.13
8,000+ $0.08 $0.08
24,000+ $0.07 $0.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

EM6K34T2CR Features

  • Dual N-Channel MOSFET configuration.
  • Rated for 50V drain-source voltage.
  • 200mA continuous drain current.
  • Logic level gate drive with 0.8V threshold.
  • Surface mount SOT-563/EMT6 package.

EM6K34T2CR Applications

  • Used in low-power switching circuits.
  • Suitable for load switching in portable devices.
  • Ideal for signal multiplexing applications.
  • Can be used in DC-DC converter designs.

EM6K34T2CR FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

50V.

What package is the EM6K34T2CR available in?

SOT-563, SOT-666, and EMT6 supplier device package.

What is the maximum operating junction temperature?

150°C.

Is the EM6K34T2CR RoHS compliant?

Yes, RoHS3 compliant.

What is the continuous drain current rating?

200mA.

What is the on-resistance?

2.2 Ohm maximum at 200mA and 4.5V gate voltage.

Does the MOSFET have logic level gate?

Yes, it features a logic level gate with 0.9V drive capability.

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