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EM6K1T2R The EM6K1T2R is a dual N-Channel MOSFET from ROHM Semiconductor. It features a 30V drain-source voltage rating, 100mA continuous drain current, and a logic level gate.
Mfr Part #:

EM6K1T2R

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The EM6K1T2R is a dual N-Channel MOSFET from ROHM Semiconductor. It features a 30V drain-source voltage rating, 100mA continuous drain current, and a logic level gate.
✓ Total Stock: 130 pcs
$ Price Range: $0.14 - $0.78

EM6K1T2R Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
130 pcs
On Request
130 pcs On Request 1 On Request On Request 1203+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

EM6K1T2R Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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EM6K1T2R Description

Short technical summary and product information.

The EM6K1T2R is a dual N-Channel MOSFET from ROHM Semiconductor, designed for surface mount applications. It integrates two independent N-Channel MOSFETs in a single compact package.

 

Key electrical specifications include a drain-source voltage (Vdss) of 30V and a continuous drain current of 100mA. The device features a logic level gate, with a maximum gate threshold voltage of 1.5V at 100µA drain current. The maximum on-state resistance is 8 Ohms at a gate-source voltage of 4V and a drain current of 10mA. Input capacitance is 13pF at 5V drain-source voltage.

 

The device is offered in SOT-563 and SOT-666 packages, with a supplier device package of EMT6. It supports a maximum power dissipation of 150mW and an operating junction temperature of up to 150°C. Mounting type is surface mount.

EM6K1T2R Quick Information

Product Type: MOSFET Array
Canonical Name: EM6K1T2R Dual N-Channel MOSFET
Subcategory: Dual N-Channel

EM6K1T2R Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

EM6K1T2R Estimated Pricing

Qty Low High
1+ $0.78 $0.78
10+ $0.48 $0.48
50+ $0.35 $0.35
100+ $0.31 $0.31
500+ $0.24 $0.24
8,000+ $0.16 $0.16
24,000+ $0.14 $0.14

Estimated market price range - modelled values for guidance only, not live distributor offers.

EM6K1T2R Features

  • Dual N-Channel MOSFET configuration.
  • 30V drain-source voltage rating.
  • 100mA continuous drain current.
  • Logic level gate for low voltage drive.
  • Surface mount EMT6 package.

EM6K1T2R Applications

  • Low-power load switching circuits.
  • Signal switching and multiplexing.
  • Battery management in portable devices.
  • Gate driver and logic interface circuits.

EM6K1T2R FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the EM6K1T2R?

The maximum operating junction temperature is 150°C.

What is the package type for the EM6K1T2R?

The device is available in SOT-563 and SOT-666 packages, with a supplier device package of EMT6.

Is the EM6K1T2R RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified.

What is the drain-source voltage rating of the EM6K1T2R?

The drain-source voltage (Vdss) is 30V.

What is the maximum drain current for the EM6K1T2R?

The maximum continuous drain current is 100mA.

What is the on-resistance of the EM6K1T2R?

The maximum on-resistance is 8 Ohms at a gate-source voltage of 4V and a drain current of 10mA.

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