| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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45 pcs
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45 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The Etron Technology EM6AB160TSE-5G is a high-speed CMOS double data rate synchronous DRAM (SDRAM) with a density of 512 Mbits. It is internally configured as a quad 8M x 16 DRAM, operating with a clock frequency of 200MHz and a data rate of 400Mbps/pin.
This device supports programmable CAS Latency options of 2, 2.5, and 3, along with programmable burst lengths of 2, 4, or 8. It operates on a power supply of 2.5V ± 0.2V and features an SSTL_2 I/O interface. The operating temperature range is 0~70°C.
The EM6AB160TSE-5G is packaged in a 66-pin TSOP II with a 0.65mm pin pitch, suitable for surface mounting. It is designed for applications requiring high memory bandwidth, making it well-suited for high-performance main memory and graphics applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The clock frequency for the EM6AB160TSE-5G is 200MHz.
The data rate for the EM6AB160TSE-5G is 400Mbps/pin.
The operating voltage for the EM6AB160TSE-5G is 2.5V.
The operating temperature range for this DRAM is 0~70°C.
The EM6AB160TSE-5G is available in a 66-pin TSOP II package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.