| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Average Rectified Current | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Voltage | |
| Junction Capacitance | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Supplier Device Package | |
| Technology | |
| Voltage |
The EGP20F is a general purpose fast recovery rectifier diode from On Semiconductor. It is designed for applications requiring a fast switching speed with a reverse recovery time of 50 ns typical at rated conditions.
Key electrical specifications include an average rectified current of 2A and a forward voltage of 1.25V typical at 2A. The device is rated for a maximum repetitive peak reverse voltage of 300V (implied by the product title) and operates over a junction temperature range of -65°C to 150°C.
The EGP20F is packaged in a DO-15 through-hole case with axial leads, making it suitable for point-to-point wiring and automated insertion. The standard technology is a silicon fast recovery diode, offering efficient switching for power conversion and freewheeling circuits.
This component is RoHS3 compliant and REACH unaffected, meeting current environmental standards. The moisture sensitivity level is MSL 1 for unlimited floor life.
The maximum repetitive peak reverse voltage is 300V as implied by the product title.
The typical forward voltage is 1.25V at a forward current of 2A.
The typical reverse recovery time is 50 ns.
The EGP20F is offered in a DO-15 through-hole package with axial leads.
The operating temperature range is -65°C to 150°C.