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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current - Average Rectified (Io) | |
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| Operating Temperature - Junction | |
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| Reverse Recovery Time (trr) | |
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| Voltage - DC Reverse (Vr) (Max) | |
| Voltage - Forward (Vf) (Max) @ If |
The EGP10C is a general purpose rectifier diode manufactured by On Semiconductor. It is designed for applications requiring a maximum reverse voltage of 150V and an average rectified current of 1A. The diode features a fast recovery time of 50ns, making it suitable for high-frequency rectification circuits. The forward voltage drop is typically 950mV at 1A forward current.
The device uses standard silicon technology and operates over a junction temperature range of -65°C to 150°C. It is packaged in a DO-204AL (DO-41) axial lead package for through-hole mounting, providing reliable mechanical and thermal performance.
According to available data, the EGP10C is RoHS3 compliant, has an MSL of 1 (unlimited), and is REACH unaffected. The part is available from distributors such as DigiKey under cross-reference number 2156-EGP10C-ND.
150V.
1A.
Maximum 950mV at 1A.
50ns.
DO-204AL (DO-41) axial lead package for through-hole mounting.
-65°C to 150°C.
Yes, it is RoHS3 compliant.