EFC6612R-TF Dual N-channel common drain MOSFET rated for 20V source-to-source voltage and 23A continuous source current. Features low on-resistance down to 3.3mΩ typical at 4.5V gate drive.
Mfr Part #:

EFC6612R-TF

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual N-channel common drain MOSFET rated for 20V source-to-source voltage and 23A continuous source current. Features low on-resistance down to 3.3mΩ typical at 4.5V gate drive.
✓ Total Stock: 7,386 pcs
$ Price Range: $0.40 - $1.69

EFC6612R-TF Available from 1 distributor

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✓ Non-Authorised
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EFC6612R-TF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Lead Style
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Technology

EFC6612R-TF Description

Short technical summary and product information.

The EFC6612R-TF is a dual N-channel common drain MOSFET from On Semiconductor, designed for lithium-ion battery charging and discharging switch applications. It features a maximum source-to-source voltage of 20V and continuous source current of 23A. The device offers low on-state resistance with typical values of 3.3mΩ at VGS=4.5V and IS=4.5A, making it suitable for high-efficiency power management.

 

This MOSFET supports logic-level gate drive with 2.5V drive capability, allowing direct interface with low-voltage controllers. It includes a protection diode and is ESD rated to 2kV HBM. The device is halogen-free compliant and packaged in a compact 6-SMD no-lead package (6-CSP 1.77x3.54mm) for surface mount assembly.

 

Key electrical characteristics include gate threshold voltage of 0.5V to 1.3V, forward transconductance of 4.7S, and total gate charge of 27nC typical. The device is rated for junction temperatures up to 150°C and has a thermal resistance of 50°C/W when mounted on a ceramic substrate.

EFC6612R-TF Quick Information

Product Type: Dual N-Channel MOSFET
Canonical Name: EFC6612R-TF Dual N-Channel MOSFET (Common Drain)
Subcategory: Dual N-Channel Common Drain

EFC6612R-TF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

EFC6612R-TF Estimated Pricing

Qty Low High
1+ $1.69 $1.69
10+ $1.07 $1.07
50+ $0.80 $0.80
100+ $0.71 $0.71
500+ $0.56 $0.56
5,000+ $0.42 $0.42
10,000+ $0.40 $0.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

EFC6612R-TF Features

  • Dual N-channel common drain configuration.
  • 20V maximum source-to-source voltage rating.
  • 23A continuous source current capability.
  • Low on-resistance down to 3.3mΩ typical.
  • Logic level gate drive with 2.5V capability.

EFC6612R-TF Applications

  • Lithium-ion battery charging and discharging switches.
  • Load switching in portable electronics.
  • Power management for low-voltage systems.
  • Battery protection circuits.

EFC6612R-TF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum source-to-source voltage?

20V.

What is the package type?

6-SMD, No Lead (6-CSP 1.77x3.54mm).

What is the maximum junction temperature?

150°C.

Is the EFC6612R-TF RoHS compliant?

Yes, RoHS3 compliant and halogen-free.

What is the continuous source current rating?

23A.

What is the on-resistance at 4.5V gate drive?

Typical 3.3mΩ, maximum 5.1mΩ at IS=4.5A.

Does it support logic-level gate drive?

Yes, it supports 2.5V drive.

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