EFC6611R-TF

The EFC6611R-TF is a dual N-Channel MOSFET from On Semiconductor in a common-drain configuration. It is designed for 1-cell lithium-ion battery protection and power management applications. The device integrates two N-Channel MOSFETs with shared drain terminals, simplifying PCB layout for battery charging and discharging switches.

The MOSFET features a drain-to-source voltage (VSSS) rating of 12V and a gate-to-source voltage range of ±8V. It supports a continuous drain current of 27A and a pulsed current of 100A (100 µs pulse width, 1% duty cycle). The on-resistance is typically 2.3 mΩ at VGS=4.5V with a maximum of 3.2 mΩ, and 3.3 mΩ typical at VGS=3.1V (max 4.4 mΩ). Gate threshold voltage ranges from 0.5V to 1.3V at IS=1mA, making it suitable for logic-level drive. The device also features an ESD rating of 2 kV HBM and an ESD diode-protected gate.

The device is supplied in a surface-mount 6-CSP package (1.77x3.54 mm) with no leads, suitable for compact designs. Thermal resistance junction-to-ambient is 50°C/W when mounted on a ceramic substrate (5000 mm² x 0.8 mm). Maximum power dissipation is 2.5W, and the junction temperature can reach 150°C. The device is halogen-free, RoHS compliant, and Pb-Free.

Typical applications include 1-cell lithium-ion battery charging and discharging switches, power switching in portable devices, and load switching circuits. The common-drain configuration and low on-resistance make it efficient for battery protection circuits.