| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology |
The EFC6605R-TR is a dual N-channel common-drain power MOSFET from On Semiconductor, designed for battery management applications. It features a 20V source-to-source breakdown voltage and a continuous current rating of 10A, with pulsed current capability up to 60A. The device is logic level gate driven with a threshold voltage of 0.5V to 1.3V, enabling direct control from low-voltage logic.
Electrical characteristics include low on-resistance: typical 11.1mΩ at VGS=4.5V, ranging from 8.8mΩ to 13.3mΩ depending on gate drive voltage. Gate charge is 19.8nC typical. Switching times are moderate with turn-on delay of 154ns and rise time of 678ns, but turn-off delay is 44.4µs and fall time 60.8µs. The device includes built-in ESD protection of 2kV HBM.
Packaged in a 6-EFCP (1.9x1.46mm) surface mount package, it is halogen free and RoHS3 compliant. Thermal resistance from junction to ambient is 78.1°C/W when mounted on a ceramic substrate. The device is suitable for applications such as lithium-ion battery charging and discharging switches.
| Qty | Low | High |
|---|---|---|
| 5,000+ | $0.18 | $0.18 |
| 10,000+ | $0.17 | $0.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The source-to-source breakdown voltage (V(BR)SSS) is 20V minimum.
The package is 6-SMD, No Lead, also known as 6-EFCP (1.9x1.46mm).
The operating junction temperature is up to 150°C, with a storage temperature range of -55°C to 150°C.
The part is indicated as RoHS3 compliant, but this is unverified.
The continuous source current (IS) is 10A maximum.
The gate threshold voltage (VGS(th)) ranges from 0.5V to 1.3V.
The ESD rating is 2kV HBM minimum.