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EFC6602R-A-TR Dual N-channel MOSFET array with common drain configuration, surface mount package, logic level gate drive, and 2W power dissipation.
Mfr Part #:

EFC6602R-A-TR

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual N-channel MOSFET array with common drain configuration, surface mount package, logic level gate drive, and 2W power dissipation.
✓ Total Stock: 300,474 pcs

EFC6602R-A-TR Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
300,000 pcs
On Request
300000 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
354 pcs
On Request
354 pcs On Request 1 On Request On Request 13+ On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
120 pcs
On Request
120 pcs On Request 1 On Request On Request 1723/ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

EFC6602R-A-TR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Technology
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EFC6602R-A-TR Description

Short technical summary and product information.

The EFC6602R-A-TR is a dual N-channel MOSFET array from On Semiconductor, featuring two N-Channel MOSFETs in a common drain configuration. This device is designed for surface mount assembly in the compact EFCP2718-6CE-020 package (6-XFBGA, FCBGA). It supports logic level gate drive at 2.5V, making it suitable for low-voltage switching applications.

 

The MOSFET has a maximum gate charge of 55 nC at Vgs = 4.5V, and a maximum power dissipation of 2W. The device is rated for an operating junction temperature of up to 150°C. It is RoHS3 compliant and REACH unaffected, with an MSL rating of 1 (unlimited).

EFC6602R-A-TR Quick Information

Product Type: MOSFET Array
Canonical Name: EFC6602R-A-TR Dual N-Channel MOSFET Array
Subcategory: Transistors - FETs, MOSFETs - Arrays

EFC6602R-A-TR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

EFC6602R-A-TR Features

  • Dual N-channel common drain MOSFETs.
  • Logic level gate drive at 2.5V.
  • 55nC maximum gate charge.
  • 2W power dissipation capability.
  • Surface mount 6-XFBGA package.

EFC6602R-A-TR Applications

  • Low-voltage power management circuits.
  • Load switching and battery protection.
  • DC-DC converter MOSFET arrays.

EFC6602R-A-TR FAQs

4 frequently asked questions generated from this part’s specifications.
What is the package type of the EFC6602R-A-TR?

6-XFBGA, FCBGA (Supplier package EFCP2718-6CE-020).

What is the operating temperature range?

Maximum junction temperature 150°C.

Is this device RoHS compliant?

RoHS3 Compliant (unverified).

Does it support logic level gate drive?

Yes, logic level gate drive at 2.5V.

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