| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
65,000 pcs
|
65000 pcs | On Request | 1 | On Request | On Request | 1646+ | On Request | On Request | |
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology |
The EFC6601R-TR is a dual N-Channel MOSFET from On Semiconductor, utilizing MOSFET (Metal Oxide) technology. It features a logic level gate with 2.5V drive capability, making it suitable for low-voltage switching applications. The device has a maximum gate charge of 48nC at 4.5V and a power dissipation of 2W. It is designed for surface mount assembly in a 6-XFBGA, FCBGA package with supplier device package EFCP2718-6CE-020. The operating junction temperature is rated up to 150°C. Compliance information includes RoHS3, MSL 1, and REACH unaffected status.
This MOSFET array is ideal for compact, high-density circuit designs where space is at a premium. The dual N-Channel configuration allows for efficient switching in power management and load switching applications. The logic level gate threshold enables direct drive from low-voltage logic circuits, simplifying interface design. The small footprint package is suitable for portable and battery-powered devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.47 | $1.47 |
| 10+ | $0.92 | $0.92 |
| 50+ | $0.69 | $0.69 |
| 100+ | $0.61 | $0.61 |
| 500+ | $0.48 | $0.48 |
| 5,000+ | $0.36 | $0.36 |
| 10,000+ | $0.34 | $0.34 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The EFC6601R-TR is available in a 6-XFBGA, FCBGA package with supplier device package EFCP2718-6CE-020.
The maximum operating junction temperature is 150°C.
The EFC6601R-TR is listed as RoHS3 compliant, but this is unverified.
It is a dual N-Channel MOSFET array.
The maximum gate charge is 48nC at 4.5V.
Surface mount.
2W.