EFC4K105NUZTDG Dual N-channel common drain MOSFET from On Semiconductor. Features 22V source-to-source breakdown voltage, 25A continuous current, and low on-resistance down to 3.55mΩ at 4.5V gate drive.
Mfr Part #:

EFC4K105NUZTDG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual N-channel common drain MOSFET from On Semiconductor. Features 22V source-to-source breakdown voltage, 25A continuous current, and low on-resistance down to 3.55mΩ at 4.5V gate drive.
✓ Total Stock: 15,000 pcs
$ Price Range: $0.37 - $1.34

EFC4K105NUZTDG Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
15,000 pcs
15000 pcs On Request 1 On Request On Request On Request On Request On Request

EFC4K105NUZTDG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

EFC4K105NUZTDG Description

Short technical summary and product information.

The EFC4K105NUZTDG is a dual N-channel common drain MOSFET designed for battery protection applications, particularly 1-2 cell lithium-ion battery charging and discharging switches. Manufactured by On Semiconductor, this device integrates two N-channel MOSFETs in a common drain configuration.

 

It features a source-to-source breakdown voltage (V(BR)SSS) of 22V minimum, with a maximum continuous source current of 25A at 25°C and pulsed current capability up to 100A. The on-state resistance (RSS(on)) is specified at multiple gate voltages: 3.55mΩ maximum at Vgs=4.5V, 3.65mΩ at 3.8V, 5.3mΩ at 3.1V, and 7.2mΩ at 2.5V, enabling logic-level gate drive. Gate threshold voltage ranges from 0.4V to 1.3V. The device includes an ESD diode-protected gate.

 

The MOSFET is housed in a 10-WLCSP (Wafer Level Chip Scale Package) measuring 3.40 x 1.96 x 0.10 mm, with a case code of 567PL. It is surface mountable. Maximum power dissipation is 2.5W when mounted on a ceramic substrate, with a junction-to-ambient thermal resistance of 50°C/W. Operating junction temperature range is -55°C to 150°C.

 

The device is Pb-Free, Halogen Free, and RoHS compliant. It is suitable for portable machine power switches and 1-2 cell lithium-ion battery protection circuits.

EFC4K105NUZTDG Quick Information

Product Type: Dual N-Channel MOSFET
Canonical Name: EFC4K105NUZTDG Dual N-Channel Common Drain MOSFET
Subcategory: Dual N-Channel Common Drain

EFC4K105NUZTDG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

EFC4K105NUZTDG Estimated Pricing

Qty Low High
1+ $1.34 $1.34
10+ $0.85 $0.85
100+ $0.56 $0.56
500+ $0.44 $0.44
1,000+ $0.40 $0.40
2,000+ $0.37 $0.37

Estimated market price range - modelled values for guidance only, not live distributor offers.

EFC4K105NUZTDG Features

  • 22V source-to-source breakdown voltage.
  • 25A continuous source current rating.
  • Low on-resistance down to 3.55mΩ.
  • Logic level gate drive capability.
  • Pb-Free, Halogen Free, RoHS compliant.

EFC4K105NUZTDG Applications

  • 1-2 cell lithium-ion battery protection.
  • Power switch for portable devices.
  • Battery charging and discharging control.
  • Low-voltage load switching applications.

EFC4K105NUZTDG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the source-to-source breakdown voltage?

22V minimum at Id=1mA, Vgs=0V.

What package type is the EFC4K105NUZTDG?

10-SMD, No Lead (10-WLCSP) with dimensions 3.40 x 1.96 x 0.10 mm.

What is the operating junction temperature range?

Maximum junction temperature is 150°C, storage temperature range is -55°C to 150°C.

Is the device RoHS compliant?

Yes, the device is RoHS compliant, Pb-Free, and Halogen Free.

What is the maximum continuous source current?

25A at Ta=25°C.

What is the on-resistance at 4.5V gate drive?

3.55mΩ maximum at Id=5A, Vgs=4.5V.

What is the gate threshold voltage range?

0.4V to 1.3V at Vss=10V, Id=1mA.

Home
Account

Categories