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EFC4C012NLTDG The EFC4C012NLTDG is a dual N-Channel power MOSFET from ON Semiconductor, rated for 30V source-source voltage and 19A continuous source current. It features ultra-low on-resistance down to 6.5 mΩ at 10V gate drive.
Mfr Part #:

EFC4C012NLTDG

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The EFC4C012NLTDG is a dual N-Channel power MOSFET from ON Semiconductor, rated for 30V source-source voltage and 19A continuous source current. It features ultra-low on-resistance down to 6.5 mΩ at 10V gate drive.
Total Stock: 6,000 pcs
$ Price Range: $0.76

EFC4C012NLTDG Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

EFC4C012NLTDG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Fall Time
Forward Source-Source Voltage
Gate Charge (Qg) (Max) @ Vgs
Gate-Source Leakage Current
Gate-Source Voltage
Halogen Free
Industrial Grade
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Rise Time
SVHC Present
Source Current (Maximum @ DC)
Source Current (Maximum @ Pulse, PW≤10 μs, duty cycle≤1%)
Source-Source Breakdown Voltage
Source-Source On-Resistance (Minimum/Typical/Maximum @ VGS=10 V, IS=5 A)
Source-Source On-Resistance (Minimum/Typical/Maximum @ VGS=4.5 V, IS=5 A)
Source-Source On-Resistance (Minimum/Typical/Maximum @ VGS=8 V, IS=5 A)
Source-Source Voltage
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Technology
Thermal Resistance Junction-to-Ambient
Turn-Off Delay Time
Turn-On Delay Time
Vgs(th) (Max) @ Id
Zero Gate Voltage Source Current

EFC4C012NLTDG Description

Short technical summary and product information.

The EFC4C012NLTDG is a dual N-Channel power MOSFET designed by ON Semiconductor for 3-cell lithium-ion battery protection applications. It features a common-drain configuration with two N-Channel MOSFETs in a single WLCSP6 package.

 

Key electrical specifications include a source-source breakdown voltage of 30V (minimum), continuous source current of 19A, and pulse current up to 76A. On-resistance is ultra-low: 6.5 mΩ maximum at VGS=10V, 8.4 mΩ at 8V, and 13 mΩ at 4.5V. Gate threshold voltage ranges from 1.3V to 2.2V. Gate charge is 18 nC maximum at 4.5V.

 

Thermal characteristics: maximum power dissipation is 2.5W at ambient temperature. Junction temperature range up to 150°C. The device is surface mounted in a 6-SMD, No Lead package (6-WLCSP 3.5x1.9). Thermal resistance junction-to-ambient is 50°C/W when mounted on a ceramic substrate.

 

The device is Pb-Free, Halogen Free/BFR Free, and RoHS3 compliant. It is suitable for notebook PC battery charging and discharging switches, and other 3-cell lithium-ion battery protection circuits.

EFC4C012NLTDG Quick Information

Product Type: Dual N-Channel MOSFET Array
Series: EFC4C012NL
Canonical Name: EFC4C012NLTDG Dual N-Channel Power MOSFET (Common Drain)
Subcategory: Dual N-Channel MOSFET

EFC4C012NLTDG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

EFC4C012NLTDG Estimated Pricing

Qty Low High
5,000+ $0.76 $0.76

Estimated market price range - modelled values for guidance only, not live distributor offers.

EFC4C012NLTDG Features

  • Ultra-low on-resistance: 6.5 mΩ at 10V.
  • Dual N-Channel common-drain configuration.
  • Rated for 30V source-source voltage.
  • Continuous source current of 19A.
  • RoHS3 compliant and Pb-Free.

EFC4C012NLTDG Applications

  • 3-cell lithium-ion battery protection.
  • Notebook PC battery charging/discharging switches.
  • Battery management systems.
  • Load switching in portable devices.

EFC4C012NLTDG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum source-source voltage of the EFC4C012NLTDG?

30V.

What package is the EFC4C012NLTDG available in?

6-WLCSP (3.5x1.9) surface-mount package.

What is the operating temperature range?

-55°C to 150°C.

Is the EFC4C012NLTDG RoHS compliant?

Yes, RoHS3 compliant.

What is the continuous source current rating?

19A DC.

What is the typical on-resistance at 10V gate drive?

5.0 mΩ typical, 6.5 mΩ maximum.

What is the gate threshold voltage range?

1.3V to 2.2V.

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