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EFC4C002NLTDG Dual N-Channel Power MOSFET from On Semiconductor, rated for 30V source-source voltage and 30A continuous current. Features ultra low on-resistance of 2.6mΩ at 10V gate drive, in a compact 8-WLCSP package.
Mfr Part #:

EFC4C002NLTDG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual N-Channel Power MOSFET from On Semiconductor, rated for 30V source-source voltage and 30A continuous current. Features ultra low on-resistance of 2.6mΩ at 10V gate drive, in a compact 8-WLCSP package.
✓ Total Stock: 1,000 pcs
$ Price Range: $2.11

EFC4C002NLTDG Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Braun Electronic Components ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

EFC4C002NLTDG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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EFC4C002NLTDG Description

Short technical summary and product information.

The EFC4C002NLTDG is a dual N-Channel power MOSFET from On Semiconductor, designed for 3-cell lithium-ion battery protection applications. It features a common-drain configuration with two N-channel MOSFETs in a single 8-WLCSP package.

 

Key electrical specifications include a maximum source-source voltage of 30V, a maximum continuous source current of 30A, and a pulsed current rating of 120A. The device offers ultra low on-resistance: typically 2.0mΩ at VGS=10V (max 2.6mΩ), 3.3mΩ max at VGS=8V, and 5.1mΩ max at VGS=4.5V. Gate threshold voltage ranges from 1.3V to 2.2V. The device is logic level gate compatible.

 

The MOSFET is built with onsemi's trench technology to minimize gate charge and on-resistance. It is suitable for battery charging and discharging switches in drones, notebook PCs, and other portable electronics. The package is a surface-mount 8-XFBGA WLCSP with dimensions 6x2.5mm, offering a compact footprint.

 

The device is Pb-Free, Halogen Free, and RoHS compliant. Maximum power dissipation is 2.6W, and junction temperature is rated up to 150°C. Thermal resistance junction-to-ambient is 48°C/W when mounted on a ceramic substrate.

EFC4C002NLTDG Quick Information

Product Type: MOSFET Array
Series: EFC4C002NL
Canonical Name: Dual N-Channel Power MOSFET, 30V, 30A, 8-WLCSP
Subcategory: MOSFET Arrays

EFC4C002NLTDG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

EFC4C002NLTDG Estimated Pricing

Qty Low High
5,000+ $2.11 $2.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

EFC4C002NLTDG Features

  • Ultra low on-resistance: 2.6mΩ at 10V gate drive.
  • Rated for 30V source-source voltage and 30A continuous current.
  • Logic level gate drive compatible from 4.5V.
  • Compact 8-WLCSP surface mount package.
  • RoHS compliant and halogen free.

EFC4C002NLTDG Applications

  • Ideal for 3-cell lithium-ion battery protection circuits.
  • Suitable for drone and notebook PC power management.
  • Used in battery charging and discharging switch applications.

EFC4C002NLTDG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum source-source voltage of the EFC4C002NLTDG?

30V.

What package is the EFC4C002NLTDG available in?

8-XFBGA, WLCSP (8-WLCSP 6x2.5).

What is the maximum junction temperature?

150°C.

Is the EFC4C002NLTDG RoHS compliant?

Yes, it is RoHS3 compliant, Pb-Free and Halogen Free.

What is the continuous drain current rating?

30A.

What is the typical on-resistance at 10V gate drive?

2.0mΩ typical, 2.6mΩ maximum.

What is the gate threshold voltage range?

1.3V to 2.2V at Id=1mA.

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