| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
96,000 pcs
|
96000 pcs | On Request | 1 | On Request | On Request | 1444+ | On Request | On Request | |
|
26,000 pcs
|
26000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology |
The EFC4626R-TR is a dual N-channel MOSFET array from On Semiconductor, featuring a common drain configuration. It is designed for surface mount assembly in a compact 4-XFBGA package (4-BGA 1x1 supplier package). The device operates with a maximum drain-to-source voltage of 24V and can handle continuous drain current up to 5A.
Key electrical characteristics include a maximum gate charge of 7.5nC at Vgs=4.5V, enabling efficient switching. The logic level gate threshold allows drive from 2.5V logic. Power dissipation is rated at 1.4W. The junction temperature limit is 150°C.
This MOSFET array is suitable for applications requiring two N-channel devices in a common drain configuration, such as load switching, power management, and battery protection circuits. The small footprint BGA package is ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.58 | $0.58 |
| 10+ | $0.36 | $0.36 |
| 50+ | $0.26 | $0.26 |
| 100+ | $0.23 | $0.23 |
| 500+ | $0.17 | $0.17 |
| 8,000+ | $0.11 | $0.11 |
| 16,000+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 24V.
It is available in a 4-XFBGA surface mount package, with supplier device package 4-BGA (1x1).
The maximum junction temperature is 150°C.
It is listed as RoHS3 Compliant, but this is unverified.
It is a dual N-channel MOSFET with common drain configuration.
The maximum gate charge is 7.5nC at Vgs=4.5V.
The maximum power dissipation is 1.4W.