| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,290 pcs
|
18290 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The EFC2K107NUZTCG is a dual N-channel MOSFET from On Semiconductor designed for low-voltage, high-efficiency power management applications. It is rated for a drain-source voltage of 12 V and a continuous drain current of 20 A. The device features a logic level gate with 2.5V drive, enabling direct interface with low-voltage control logic.
Key electrical characteristics include a maximum on-resistance of 2.85 mΩ at 5 A and 4.5 V gate drive, a maximum gate charge of 30 nC at 3.8 V, and a maximum gate threshold voltage of 1.3 V at 1 mA drain current. These parameters make it suitable for high-frequency switching and battery-powered applications.
The device is configured as 2 N-Channel (Dual) Common Drain MOSFETs and uses MOSFET (Metal Oxide) technology. It is packaged in a 10-SMD, No Lead package (10-WLCSP 1.84x1.96 mm) for surface mount assembly, with a maximum junction temperature of 150°C and power dissipation of 1.8 W at ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.31 | $1.31 |
| 10+ | $0.83 | $0.83 |
| 100+ | $0.55 | $0.55 |
| 500+ | $0.43 | $0.43 |
| 1,000+ | $0.39 | $0.39 |
| 2,000+ | $0.36 | $0.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
12 V
20 A at ambient temperature
2.85 milliohms at 5 A drain current and 4.5 V gate-source voltage
10-SMD, No Lead (10-WLCSP 1.84x1.96 mm)
150°C junction temperature