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EFC2K102NUZTDG The EFC2K102NUZTDG is a dual N-Channel power MOSFET from On Semiconductor with a maximum drain-source voltage of 12V and continuous drain current of 33A.
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EFC2K102NUZTDG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The EFC2K102NUZTDG is a dual N-Channel power MOSFET from On Semiconductor with a maximum drain-source voltage of 12V and continuous drain current of 33A.
✓ Total Stock: 103,690 pcs
$ Price Range: $0.38 - $1.39

EFC2K102NUZTDG Available from 1 distributor

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✓ Non-Authorised
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103,690 pcs
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EFC2K102NUZTDG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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EFC2K102NUZTDG Description

Short technical summary and product information.

The EFC2K102NUZTDG is a dual N-Channel power MOSFET from On Semiconductor, featuring a common drain configuration. It is designed for surface mount applications and is housed in a compact 10-WLCSP (2.98x1.49) package with a 10-SMD, no lead case.

 

This MOSFET offers a maximum drain-to-source voltage of 12V and a continuous drain current of 33A at ambient temperature. It features a low on-resistance of 2.65 mOhm maximum at 5A and 4.5V gate drive, making it suitable for efficient power switching. The device includes a logic level gate with 2.5V drive capability, enabling direct interfacing with low-voltage control logic.

 

The maximum gate charge is 42 nC at 3.8V, and the maximum gate threshold voltage is 1.3V at 1mA drain current. The device can dissipate up to 3.1W at ambient temperature and operates at a maximum junction temperature of 150°C.

EFC2K102NUZTDG Quick Information

Product Type: MOSFET Array
Canonical Name: EFC2K102NUZTDG Dual N-Channel Power MOSFET
Subcategory: Dual N-Channel Power MOSFET

EFC2K102NUZTDG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

EFC2K102NUZTDG Estimated Pricing

Qty Low High
1+ $1.39 $1.39
10+ $0.88 $0.88
100+ $0.58 $0.58
500+ $0.46 $0.46
1,000+ $0.42 $0.42
2,000+ $0.38 $0.38

Estimated market price range - modelled values for guidance only, not live distributor offers.

EFC2K102NUZTDG Features

  • Dual N-Channel common drain configuration.
  • 12V maximum drain-to-source voltage rating.
  • 33A continuous drain current capability.
  • Low 2.65 mOhm on-resistance at 5A.
  • Logic level gate with 2.5V drive support.

EFC2K102NUZTDG Applications

  • Ideal for battery management and protection circuits.
  • Suitable for load switching in portable devices.
  • Used in power distribution and DC-DC converters.
  • Designed for low-voltage motor control applications.

EFC2K102NUZTDG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the EFC2K102NUZTDG?

The maximum drain-to-source voltage (Vdss) is 12V.

What is the continuous drain current rating of this MOSFET?

The maximum continuous drain current is 33A at ambient temperature (Ta).

What is the on-resistance of the EFC2K102NUZTDG?

The maximum on-resistance (Rds on) is 2.65 mOhm at Id=5A and Vgs=4.5V.

What is the operating temperature range for this device?

The maximum junction temperature (TJ) is 150°C.

What package does the EFC2K102NUZTDG come in?

It comes in a 10-SMD, no lead package with a supplier device package of 10-WLCSP (2.98x1.49).

Is the EFC2K102NUZTDG RoHS compliant?

The device is listed as RoHS3 compliant, though this is unverified.

What is the gate threshold voltage of this MOSFET?

The maximum gate threshold voltage (Vgs(th)) is 1.3V at Id=1mA.

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