SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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136 pcs
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136 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The EDI88512CA25MI is a high-performance Static Random-Access Memory (SRAM) component manufactured by EDI. This monolithic device features a 512K x 8 organization, providing a total storage capacity of 4 Megabits. It is built using advanced CMOS technology, ensuring efficient operation and low power consumption.
The SRAM operates with a nominal 5V power supply. While specific access times for the EDI88512CA25MI are not detailed, related variants offer access times as fast as 70ns. This component is suitable for various data storage applications where fast read and write access is required.
Environmental compliance includes RoHS3 compliance and a Moisture Sensitivity Level (MSL) of 1. REACH status is unaffected. Further details on specific operating conditions and advanced features would typically be found in the manufacturer's datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The EDI88512CA25MI SRAM has a 512K x 8 organization.
The EDI88512CA25MI SRAM uses CMOS technology.
The EDI88512CA25MI SRAM operates with a 5V power supply.
The EDI88512CA25MI is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the EDI88512CA25MI is 1 Unlimited.
