K4X1G323PF-8GD8
Samsung Electronics
The Samsung K4X1G323PF-8GD8 is a 1Gbit LPDDR1 MOBILE memory IC operating at 1.8V and 200MHz. It comes in an FBGA-90 package.
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35 pcs
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35 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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The Elpida EDE1116AEBG-8E-F is a memory integrated circuit with a total density of 1 Gbit, equivalent to 125 Megabytes. Internally, the device is organized as 8 million words of 16 bits per word, divided into 8 independent memory banks. This organization provides a 16-bit data interface with high capacity for processor and controller memory subsystems.
The 8-bank architecture allows memory controllers to interleave access requests, reducing contention and improving effective throughput. The 16-bit data bus width makes this component suitable for systems designed around x16 memory interfaces, while the 1 Gbit density provides ample storage for firmware, data buffers, or application code.
As a discrete memory IC, the EDE1116AEBG-8E-F is intended for integration into electronic assemblies where board-level memory is required. Designers should account for the device's density, data width, and bank count when configuring memory controllers and address mapping.
| Qty | Low | High |
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| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The EDE1116AEBG-8E-F has a 1 Gbit (125 Megabytes) memory density.
It is organized as 8M words x 16 bits x 8 banks.
It features 8 memory banks.
The data bus is 16 bits wide.