| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,832 pcs
|
4832 pcs | On Request | 1 | On Request | On Request | 1536+ | On Request | On Request | |
|
4,200 pcs
|
4200 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | 1536+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology |
The ECH8697R-TL-W is a dual N-Channel common-drain power MOSFET designed by On Semiconductor. It is optimized for battery protection and power switching in portable devices, particularly for 1-2 cell lithium-ion battery applications. The device offers a drain-source voltage rating of 24V and a continuous drain current of 10A, with pulsed current capability up to 60A. It features logic-level gate drive with 2.5V threshold and an integrated ESD diode-protected gate.
Key electrical characteristics include a low on-state resistance: typical 9.3mΩ (max 11.6mΩ) at Vgs=4.5V and Id=5A. The total gate charge is only 6nC, enabling efficient switching. The device is housed in a compact SOT-28FL (8-SMD flat lead) package, suitable for surface mounting. It is Pb-Free and RoHS3 compliant, making it suitable for environmentally conscious designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.08 | $1.08 |
| 10+ | $0.68 | $0.68 |
| 50+ | $0.50 | $0.50 |
| 100+ | $0.44 | $0.44 |
| 500+ | $0.34 | $0.34 |
| 3,000+ | $0.27 | $0.27 |
| 6,000+ | $0.25 | $0.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 24 V.
It is available in an 8-SMD flat lead package (SOT-28FL/ECH8).
The maximum junction temperature is 150 °C, and the storage temperature range is -55 °C to +150 °C.
Yes, the datasheet states the device is Pb-Free and RoHS Compliant.
The maximum continuous drain current (DC) is 10 A, and pulsed drain current is 60 A.
The maximum drain-to-source on-state resistance is 11.6 mΩ at Vgs=4.5 V and Id=5 A.
The gate threshold voltage range is 0.5 V to 1.3 V at Vds=10 V, Id=1 mA.