| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
26,679 pcs
|
26679 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
260 pcs
|
260 pcs | On Request | 1 | On Request | On Request | 1514+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The ECH8695R-TL-W from On Semiconductor is a dual N-channel logic level MOSFET configured as common drain, designed for efficient power management in compact applications. With a drain-source breakdown voltage of 24V and continuous drain current rating of 11A, it provides low on-resistance of 9.1mOhm at 5A and 4.5V gate drive. The device features a logic level gate with 2.5V drive capability, allowing direct interface with low-voltage control logic. Gate charge is 10nC at 4.5V, enabling fast switching. Maximum power dissipation is 1.4W, and operating junction temperature up to 150°C. The part is housed in an 8-SMD flat lead package (SOT-28FL/ECH8) for surface mount assembly, suitable for space-constrained designs. RoHS3 compliant and MSL Level 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.29 | $1.29 |
| 10+ | $0.81 | $0.81 |
| 50+ | $0.60 | $0.60 |
| 100+ | $0.53 | $0.53 |
| 500+ | $0.41 | $0.41 |
| 3,000+ | $0.33 | $0.33 |
| 6,000+ | $0.30 | $0.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
24V.
11A at 25°C.
9.1mOhm maximum at 5A and 4.5V gate drive.
Maximum junction temperature is 150°C.
8-SMD, Flat Lead (SOT-28FL/ECH8).
It is listed as RoHS3 compliant, but this is unverified.
Maximum 1.3V at 1mA drain current.