| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
600 pcs
|
600 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request | |
|
140 pcs
|
140 pcs | On Request | 1 | On Request | On Request | 1447+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology |
The ECH8693R-TL-W is a dual N-channel MOSFET from On Semiconductor designed for low-voltage, high-current switching applications. It features a common drain configuration and logic-level gate drive with 2.5V drive capability, making it suitable for battery-powered and portable devices. Key electrical specifications include a maximum drain-source voltage of 24V, continuous drain current of 14A, and low on-resistance of 7 mΩ at 5A and 4.5V gate drive. The device offers a gate charge of 13 nC at 4.5V, contributing to efficient switching performance. Packaged in a compact SOT-28FL/ECH8 surface-mount package with flat leads, it is ideal for space-constrained designs. The MOSFET is rated for a maximum power dissipation of 1.4W and operates at junction temperatures up to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.14 | $1.14 |
| 10+ | $0.71 | $0.71 |
| 50+ | $0.53 | $0.53 |
| 100+ | $0.47 | $0.47 |
| 500+ | $0.36 | $0.36 |
| 3,000+ | $0.28 | $0.28 |
| 6,000+ | $0.26 | $0.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
24V.
14A.
7mΩ maximum at Id=5A, Vgs=4.5V.
Up to 150°C junction temperature.
8-SMD, Flat Lead (SOT-28FL/ECH8).
RoHS3 Compliant (unverified, low confidence).
13nC at Vgs=4.5V.