| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
55,880 pcs
|
55880 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,300 pcs
|
1300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology |
The ECH8690-TL-H is a complementary N and P-Channel MOSFET array designed for general-purpose switching applications. It features a maximum drain-source voltage of 60V, with N-channel continuous drain current of 4.7A and P-channel of 3.5A. The device offers a low on-resistance of 55mΩ (at 2A, 10V) for both channels, enabling efficient power management. The logic level gate allows operation with 4V drive, simplifying interfacing with low-voltage logic. Gate charge is 18nC at 10V, and input capacitance is 955pF at 20V. The MOSFET is housed in a compact 8-SMD flat lead package (8-ECH) and supports surface mount assembly. Maximum power dissipation is 1.5W, and junction temperature can reach 150°C. This device is suitable for battery-powered circuits, load switching, and DC-DC converter applications where complementary MOSFETs are needed.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.48 | $1.48 |
| 10+ | $0.93 | $0.93 |
| 50+ | $0.69 | $0.69 |
| 100+ | $0.62 | $0.62 |
| 500+ | $0.48 | $0.48 |
| 3,000+ | $0.38 | $0.38 |
| 6,000+ | $0.36 | $0.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
8-SMD, Flat Lead (8-ECH).
150°C (TJ).
RoHS3 Compliant (unverified).
N-Channel 4.7A, P-Channel 3.5A.
55mΩ at 2A, 10V.
N and P-Channel (complementary).