ECH8667-TL-H The ECH8667-TL-H is a dual P-Channel power MOSFET from On Semiconductor. It features -30V drain-source voltage, 5.5A continuous drain current, and low on-resistance of 39mOhm max at 10V.
Mfr Part #:

ECH8667-TL-H

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ECH8667-TL-H is a dual P-Channel power MOSFET from On Semiconductor. It features -30V drain-source voltage, 5.5A continuous drain current, and low on-resistance of 39mOhm max at 10V.
✓ Total Stock: 12,308 pcs
$ Price Range: $0.36 - $1.48

ECH8667-TL-H Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
9,000 pcs
9000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,654 pcs
1654 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,654 pcs
1654 pcs On Request 1 On Request On Request On Request On Request On Request

ECH8667-TL-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Package / Case
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style

ECH8667-TL-H Description

Short technical summary and product information.

The ECH8667-TL-H is a dual P-Channel power MOSFET from On Semiconductor, designed for space-constrained and power-sensitive applications. It features a maximum drain-to-source voltage of -30V, continuous drain current of -5.5A, and pulse current capability up to -40A. The device offers low on-resistance: 39mOhm max at VGS=-10V and 77mOhm max at VGS=-4.5V, enabling efficient power switching.

 

This MOSFET supports logic-level gate drive (4V threshold) and provides fast switching with typical turn-on delay of 7.2ns, rise time of 23ns, turn-off delay of 63ns, and fall time of 42ns. Gate charge is 13nC typical, minimizing driver losses. The integrated input (600pF), output (145pF), and reverse transfer (110pF) capacitances are specified at VDS=-10V.

 

The device is housed in a compact ECH8 surface mount package (8-SMD, flat lead) with a power dissipation of 1.5W when mounted on a ceramic substrate. It is supplied in tape and reel (3000 pcs/reel) and is halogen free and lead free per the datasheet.

ECH8667-TL-H Quick Information

Product Type: Power MOSFET Array
Canonical Name: ECH8667-TL-H Dual P-Channel Power MOSFET, -30V, -5.5A, 39mOhm, ECH8
Subcategory: Power MOSFET Array

ECH8667-TL-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

ECH8667-TL-H Estimated Pricing

Qty Low High
1+ $1.48 $1.48
10+ $0.93 $0.93
50+ $0.69 $0.69
100+ $0.62 $0.62
500+ $0.48 $0.48
3,000+ $0.38 $0.38
6,000+ $0.36 $0.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

ECH8667-TL-H Features

  • Dual P-Channel MOSFET in ECH8 package.
  • Low on-resistance of 39 mOhm max.
  • Logic level gate drive (4V).
  • Halogen free and lead free.
  • Fast switching with 13 nC gate charge.

ECH8667-TL-H Applications

  • Used in power management circuits.
  • Ideal for battery protection.
  • Suitable for DC-DC converters.
  • Load switching applications.
  • Motor drive circuits.

ECH8667-TL-H FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the ECH8667-TL-H?

The ECH8667-TL-H comes in an ECH8 surface mount package with 8 flat leads.

What is the operating temperature range?

The channel temperature is rated up to 150°C, and storage temperature is -55°C to +150°C.

Is the ECH8667-TL-H RoHS compliant?

The device is listed as RoHS3 compliant in the database and is lead free and halogen free per the datasheet.

What is the drain-source voltage rating?

The drain-to-source voltage is -30V.

What is the maximum drain current?

The continuous drain current is -5.5A DC, and pulse current is -40A (PW≤10μs, duty cycle≤1%).

What is the on-resistance at 10V gate drive?

The typical on-resistance is 30 mOhm, maximum 39 mOhm at VGS=-10V and ID=-2.5A.

What gate drive voltage is required?

The MOSFET is logic level gate drive compatible, with 4V drive capability.

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