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ECH8661-TL-H Complementary dual N and P-Channel power MOSFET. 30V drain-to-source voltage, 7A (N-Ch) and 5.5A (P-Ch) continuous drain current. Low on-resistance: 24mΩ (N-Ch) and 39mΩ (P-Ch) max at 10V.
Mfr Part #:

ECH8661-TL-H

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
Complementary dual N and P-Channel power MOSFET. 30V drain-to-source voltage, 7A (N-Ch) and 5.5A (P-Ch) continuous drain current. Low on-resistance: 24mΩ (N-Ch) and 39mΩ (P-Ch) max at 10V.
✓ Total Stock: 16,352 pcs
$ Price Range: $0.35 - $1.47

ECH8661-TL-H Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
12,000 pcs
On Request
12000 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
2,264 pcs
On Request
2264 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
2,088 pcs
On Request
2088 pcs On Request 1 On Request On Request 1609+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

ECH8661-TL-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Technology
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ECH8661-TL-H Description

Short technical summary and product information.

The ECH8661-TL-H is a complementary dual MOSFET from On Semiconductor, integrating an N-channel and a P-channel MOSFET in a single compact ECH8 surface-mount package. It is designed for applications requiring both high-side and low-side switching with low on-resistance and high-speed switching performance.

 

Key electrical specifications include a drain-to-source voltage rating of 30V for both channels. The N-channel MOSFET supports a continuous drain current of 7A, while the P-channel supports 5.5A. Pulsed drain current capability reaches 40A for both channels. The device features logic-level gate drive, with maximum on-resistance specified at 24mΩ for the N-channel and 39mΩ for the P-channel at VGS=10V, and 41mΩ/55mΩ at 4.5V/4V respectively.

 

The ECH8661 is housed in an 8-SMD flat lead package (ECH8) and is surface-mountable. It is halogen-free compliant and rated for operation up to 150°C channel temperature. Typical switching times include 10ns turn-on delay, 25ns rise time, 43ns turn-off delay, and 25ns fall time. Gate charge is 11.8nC typical at 10V.

ECH8661-TL-H Quick Information

Product Type: Power MOSFET Array
Series: ECH8661
Canonical Name: ECH8661-TL-H Complementary Dual N and P-Channel Power MOSFET
Subcategory: Complementary Dual MOSFET Array

ECH8661-TL-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

ECH8661-TL-H Estimated Pricing

Qty Low High
1+ $1.47 $1.47
10+ $0.93 $0.93
50+ $0.69 $0.69
100+ $0.62 $0.62
500+ $0.48 $0.48
3,000+ $0.38 $0.38
6,000+ $0.35 $0.35

Estimated market price range - modelled values for guidance only, not live distributor offers.

ECH8661-TL-H Features

  • Complementary N and P-Channel MOSFET in one package.
  • Low on-resistance: 24mΩ N-Ch, 39mΩ P-Ch at 10V.
  • Logic-level gate drive: rated for 4V operation.
  • High-speed switching with 10ns turn-on delay.
  • Halogen free and RoHS3 compliant.

ECH8661-TL-H Applications

  • Ideal for DC-DC converter synchronous rectification.
  • Used in power management for portable electronics.
  • Suitable for motor drive and load switching circuits.
  • Applicable in battery protection and charging circuits.

ECH8661-TL-H FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the ECH8661-TL-H?

The maximum channel temperature is 150°C. Storage temperature range is -55 to +150°C.

What is the package type for the ECH8661-TL-H?

The device is housed in an 8-SMD flat lead package (ECH8) for surface mount assembly.

Is the ECH8661-TL-H RoHS compliant?

The manufacturer claims RoHS3 compliance, though this is not explicitly verified in the datasheet.

What is the maximum drain current for the N-channel and P-channel?

Continuous drain current is 7A for the N-channel and 5.5A for the P-channel. Pulsed current is 40A for both channels.

What is the typical gate charge of the ECH8661?

The typical gate charge is 11.8 nC at VDS=15V, VGS=10V, ID=7A.

What is the on-resistance of the N-channel MOSFET?

Maximum on-resistance is 24mΩ at VGS=10V, ID=3.5A. Typical value is 18mΩ.

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