| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,315 pcs
|
6315 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,457 pcs
|
2457 pcs | On Request | 1 | On Request | On Request | 1227+ | On Request | On Request | |
|
440 pcs
|
440 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology |
The ECH8660-TL-H is a complementary dual power MOSFET from onsemi in a single ECH8 surface-mount package, integrating an N-channel and a P-channel enhancement-mode MOSFET for high-density mounting and high-speed switching. It features logic-level gate drive with 4V capability and is halogen free per the datasheet. The N-channel and P-channel transistors are rated for 30V and -30V drain-to-source voltage respectively, with continuous drain current of ±4.5A and pulse current of ±30A.
Electrical characteristics include a maximum on-resistance of 59mΩ at VGS=10V, ID=2A and 119mΩ at VGS=4.5V, ID=1A, with a gate threshold voltage between 1.2V and 2.6V. Total gate charge is a typical 4.4nC, and switching times are fast, with turn-on delay of 6.2ns and fall time of 7.5ns. The device can dissipate 1.5W total when mounted on a ceramic substrate, and the channel temperature rating is 150°C.
The ECH8660-TL-H is suitable for load switching, DC-DC converters, and other complementary MOSFET applications. The compact ECH8 package with flat leads supports space-constrained PCB layouts, and the surface-mount design is compatible with automated assembly. The standard tape-and-reel packing (3,000 pcs/reel) simplifies volume procurement.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
| 10+ | $0.73 | $0.73 |
| 50+ | $0.54 | $0.54 |
| 100+ | $0.48 | $0.48 |
| 500+ | $0.37 | $0.37 |
| 3,000+ | $0.29 | $0.29 |
| 6,000+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The N-channel MOSFET is rated for 30V drain-to-source voltage, the P-channel for -30V. Gate-to-source voltage rating is ±20V.
It uses an 8-SMD flat lead package with package code ECH8 (supplier device package 8-ECH).
The maximum channel temperature is 150°C, and storage temperature ranges from -55°C to +150°C.
RoHS3 compliant per database record, though not independently verified from the datasheet.
Continuous drain current is ±4.5A; pulse drain current is ±30A with a maximum pulse width of 10μs and duty cycle ≤1%.
RDS(on) is 45mΩ typical / 59mΩ maximum at VGS=10V and ID=2A, and 85mΩ typical / 119mΩ maximum at VGS=4.5V and ID=1A.
Yes, it has a logic-level gate feature with 4V drive capability.