| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Allowable Power Dissipation (per channel) | |
| Configuration | |
| Current | |
| Diode Forward Voltage | |
| Drain Current (Pulse) | |
| Drain to Source Voltage (Vdss) | |
| Drain-to-Source Breakdown Voltage (Minimum @ Id=1 mA, Vgs=0 V) | |
| Drain-to-Source On-Resistance (Maximum @ Id=1 A, Vgs=4 V) | |
| Drain-to-Source On-Resistance (Maximum @ Id=1 A, Vgs=4.5 V) | |
| FET Feature | |
| Fall Time | |
| Forward Transfer Admittance | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Threshold Voltage | |
| Gate-to-Drain Charge | |
| Gate-to-Source Charge | |
| Gate-to-Source Leakage Current | |
| Gate-to-Source Voltage | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Number of Pins | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Transfer Capacitance | |
| Rise Time | |
| Standard Package Quantity | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Turn-Off Delay Time | |
| Turn-On Delay Time | |
| Zero Gate Voltage Drain Current |
The ECH8657-TL-H is a dual N-Channel power MOSFET manufactured by On Semiconductor in an ECH8 surface mount package. Designed for general-purpose switching, this device integrates two independent MOSFETs with logic level gate drive capability.
Electrical characteristics include a 35V drain-to-source breakdown voltage, 4.5A continuous drain current, and a maximum on-resistance of 59mΩ at Vgs=10V. Lower gate drive voltages of 4.5V and 4V yield on-resistance values of 119mΩ and 155mΩ respectively. The device features a total gate charge of 4.5nC and typical switching times of 6ns turn-on delay, 11ns rise time, 17ns turn-off delay, and 9ns fall time.
Packaged in an 8-ECH flat lead surface mount case, the ECH8657-TL-H supports a maximum power dissipation of 1.5W (total) when mounted on a ceramic substrate. The operating channel temperature is rated up to 150°C, with storage temperature ranging from -55°C to +150°C. Available in tape and reel packaging with 3,000 pieces per reel.
The device is halogen free and lead free as per the datasheet. It includes a built-in protection diode and is suitable for low voltage power management, load switching, and DC-DC converter applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.14 | $1.14 |
| 10+ | $0.71 | $0.71 |
| 50+ | $0.52 | $0.52 |
| 100+ | $0.46 | $0.46 |
| 500+ | $0.36 | $0.36 |
| 3,000+ | $0.28 | $0.28 |
| 6,000+ | $0.26 | $0.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 35V minimum.
It comes in an 8-ECH surface mount package (8-SMD, flat lead).
The channel temperature is rated up to 150°C; storage temperature range is -55°C to +150°C.
The continuous drain current is 4.5A DC.
Yes, it has a logic level gate feature with a gate threshold voltage range of 1.2V to 2.6V.
The maximum on-resistance is 119mΩ at Vgs=4.5V and Id=1A.