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ECH8601M-TL-H Dual N-Channel MOSFET array from On Semiconductor. Rated for 24V drain-source voltage and 8A drain current, with logic level gate drive.
Mfr Part #:

ECH8601M-TL-H

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual N-Channel MOSFET array from On Semiconductor. Rated for 24V drain-source voltage and 8A drain current, with logic level gate drive.
✓ Total Stock: 1,483 pcs

ECH8601M-TL-H Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
1,483 pcs
On Request
1483 pcs On Request 1 On Request On Request 16+ On Request On Request
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ECH8601M-TL-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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ECH8601M-TL-H Description

Short technical summary and product information.

This is a dual N-channel MOSFET array from On Semiconductor, part number ECH8601M-TL-H. It features a common drain configuration and is designed for surface mount applications.

 

Key electrical specifications: drain-source voltage 24V, drain current 8A (at Ta), maximum on-resistance 23 mOhm at 4A and 4.5V gate drive. Gate threshold voltage 1.3V maximum, gate charge 7.5 nC. It supports logic level gate drive and 2.5V drive.

 

The device is housed in an 8-SMD flat lead package (8-ECH) and operates at a junction temperature up to 150°C. It is RoHS3 compliant and has MSL 1 unlimited.

ECH8601M-TL-H Quick Information

Product Type: Dual N-Channel MOSFET Array
Canonical Name: ECH8601M-TL-H Dual N-Channel MOSFET 24V 8A 8-ECH
Subcategory: Dual N-Channel

ECH8601M-TL-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

ECH8601M-TL-H Features

  • Dual N-channel common drain configuration.
  • 24V drain-source voltage rating.
  • 8A drain current capability.
  • Logic level gate drive support.
  • Surface mount 8-ECH package.

ECH8601M-TL-H Applications

  • Ideal for low voltage power switching circuits.
  • Used in battery management and load switching.
  • Suitable for DC-DC converter applications.

ECH8601M-TL-H FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the ECH8601M-TL-H?

24V.

What is the maximum drain current?

8A at Ta.

What is the typical on-resistance?

23 mOhm maximum at 4A and 4.5V gate drive.

What is the package type?

8-SMD flat lead (8-ECH).

What is the operating temperature range?

Junction temperature up to 150°C.

Is the device RoHS compliant?

RoHS3 compliant (unverified).

What is the gate threshold voltage?

1.3V maximum at 1mA.

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