| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology |
The ECH8601M-C-TL-H is a dual N-channel MOSFET array from onsemi, configured as two N-Channel MOSFETs with common drain. It is designed for surface mount applications requiring efficient power switching.
Key electrical specifications include a drain-to-source voltage (Vdss) of 24V, continuous drain current of 8A, and maximum drain-source on-resistance of 23mOhm at 4A and 4.5V gate drive. The device features a logic level gate with 2.5V drive capability, enabling direct interface with low-voltage logic. Maximum gate charge is 7.5nC at 4.5V, and power dissipation is rated at 1.5W.
The MOSFET array is housed in an 8-SMD flat lead package (supplier device package 8-ECH), suitable for compact PCB layouts. Operating junction temperature range is up to 150°C. The device is RoHS3 compliant and has MSL level 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 6,000+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
24V.
8A.
23mOhm maximum at 4A and 4.5V gate drive.
7.5nC maximum at 4.5V.
Maximum junction temperature 150°C.
8-SMD flat lead (supplier device package 8-ECH).
Yes, RoHS3 compliant (unverified).