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ECH8420-TL-H N-Channel MOSFET with 20V drain-source voltage and 14A drain current. Features 6.8mOhm on-resistance at 4.5V gate drive.
Mfr Part #:

ECH8420-TL-H

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 20V drain-source voltage and 14A drain current. Features 6.8mOhm on-resistance at 4.5V gate drive.
✓ Total Stock: 18,000 pcs
$ Price Range: $0.33 - $1.50

ECH8420-TL-H Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
18,000 pcs
On Request
18000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

ECH8420-TL-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
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ECH8420-TL-H Description

Short technical summary and product information.

This N-Channel MOSFET from ON Semiconductor, part number ECH8420-TL-H, is a power MOSFET using metal oxide technology. It is designed for switching applications requiring low voltage and moderate current.

 

Key electrical characteristics include a maximum drain-source voltage of 20V, a drain current of 14A at ambient temperature, and a power dissipation of 1.6W. The gate-source voltage is rated at ±12V, and the gate drive voltage options are 1.8V and 4.5V. The device features a low drain-source on-resistance of 6.8mOhm at 7A drain current and 4.5V gate-source voltage. Input capacitance is 2430pF at Vds=10V, and total gate charge is 29nC at Vgs=4.5V, enabling efficient switching.

 

The MOSFET is housed in a surface-mount 8-SMD, Flat Lead package (supplier package 8-ECH). Operating junction temperature can reach up to 150°C. This combination of low on-resistance and low gate charge makes it suitable for power conversion and load switching circuits.

ECH8420-TL-H Quick Information

Product Type: MOSFET
Series: ECH8420
Canonical Name: ECH8420-TL-H N-Channel MOSFET
Subcategory: N-Channel MOSFET

ECH8420-TL-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

ECH8420-TL-H Estimated Pricing

Qty Low High
1+ $1.50 $1.50
10+ $0.95 $0.95
50+ $0.70 $0.70
100+ $0.63 $0.63
500+ $0.49 $0.49
3,000+ $0.35 $0.35
6,000+ $0.33 $0.33

Estimated market price range - modelled values for guidance only, not live distributor offers.

ECH8420-TL-H Features

  • N-Channel MOSFET with 20V drain-source voltage.
  • Maximum drain current of 14A at Ta.
  • Low on-resistance of 6.8mOhm at 4.5V gate drive.
  • Surface mount 8-ECH package.
  • RoHS3 compliant and REACH unaffected.

ECH8420-TL-H Applications

  • Suitable for low-voltage DC-DC converters.
  • Used in battery-powered load switching.
  • Ideal for logic-level power management.
  • Common in portable device power circuits.

ECH8420-TL-H FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

20 V maximum.

What is the maximum drain current?

14 A at ambient temperature.

What is the package type?

8-SMD, Flat Lead (Supplier package 8-ECH).

What is the operating junction temperature range?

Maximum 150°C.

What is the on-resistance?

6.8 mΩ at 7A drain current and 4.5V gate-source voltage.

What is the RoHS compliance status?

RoHS3 Compliant (unverified).

What is the total gate charge?

29 nC at Vgs=4.5V.

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