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ECH8320-TL-H P-Channel MOSFET from On Semiconductor with 20V drain-source voltage and 9.5A continuous drain current. Features low on-resistance of 14.5mOhm at 4.5V gate drive.
Mfr Part #:

ECH8320-TL-H

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET from On Semiconductor with 20V drain-source voltage and 9.5A continuous drain current. Features low on-resistance of 14.5mOhm at 4.5V gate drive.
✓ Total Stock: 2,000 pcs
$ Price Range: $0.33 - $0.37

ECH8320-TL-H Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
2,000 pcs
On Request
2000 pcs On Request 1 On Request On Request 16/ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

ECH8320-TL-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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ECH8320-TL-H Description

Short technical summary and product information.

The ECH8320-TL-H is a P-Channel enhancement mode MOSFET manufactured by On Semiconductor. It is designed for load switching and power management applications requiring low voltage operation. The device offers a drain-source voltage (Vdss) of 20V and a continuous drain current of 9.5A at ambient temperature. With a maximum on-resistance of 14.5mOhm at Vgs=4.5V and Id=5A, it provides efficient power handling. The gate threshold voltage is typically 1.3V at Id=1mA, allowing logic-level drive capability. The MOSFET is housed in an 8-SMD flat lead package (supplier device package 8-ECH) and is surface mountable. It features a maximum power dissipation of 1.6W at ambient temperature and an operating junction temperature up to 150°C. The device is RoHS3 compliant and has an MSL of 1 (unlimited). Typical applications include battery protection circuits, load switches, and DC-DC converters.

ECH8320-TL-H Quick Information

Product Type: MOSFET
Canonical Name: ECH8320-TL-H P-Channel MOSFET
Subcategory: P-Channel MOSFET

ECH8320-TL-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

ECH8320-TL-H Estimated Pricing

Qty Low High
3,000+ $0.37 $0.37
6,000+ $0.35 $0.35
9,000+ $0.33 $0.33
15,000+ $0.33 $0.33

Estimated market price range - modelled values for guidance only, not live distributor offers.

ECH8320-TL-H Features

  • P-Channel MOSFET with 20V drain-source voltage.
  • Continuous drain current rating of 9.5A.
  • Low on-resistance of 14.5mOhm at 4.5V gate drive.
  • Logic-level gate threshold voltage of 1.3V.
  • Surface mount 8-SMD flat lead package.

ECH8320-TL-H Applications

  • Used in battery protection circuits.
  • Ideal for load switching applications.
  • Suitable for DC-DC converter designs.
  • Power management in portable devices.

ECH8320-TL-H FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the ECH8320-TL-H?

The drain-source voltage (Vdss) is 20V.

What is the maximum continuous drain current?

The maximum continuous drain current is 9.5A at ambient temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 14.5mOhm at Vgs=4.5V and Id=5A.

What is the operating junction temperature range?

The maximum junction temperature is 150°C.

What package is the ECH8320-TL-H available in?

It is available in an 8-SMD flat lead package (supplier device package 8-ECH).

Is the ECH8320-TL-H RoHS compliant?

Yes, it is RoHS3 compliant.

What is the gate threshold voltage?

The maximum gate threshold voltage is 1.3V at Id=1mA.

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