ECH8315-TL-H P-Channel power MOSFET with -30V drain-source voltage and 7.5A continuous drain current. Features low on-resistance of 25mΩ at 10V gate drive and surface mount 8-ECH package.
Mfr Part #:

ECH8315-TL-H

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel power MOSFET with -30V drain-source voltage and 7.5A continuous drain current. Features low on-resistance of 25mΩ at 10V gate drive and surface mount 8-ECH package.
✓ Total Stock: 309,000 pcs
$ Price Range: $0.30 - $1.28

ECH8315-TL-H Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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309,000 pcs
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ECH8315-TL-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Junction Temperature
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)

ECH8315-TL-H Description

Short technical summary and product information.

This is a P-Channel power MOSFET from On Semiconductor, part number ECH8315-TL-H. It is designed using trench technology to achieve low on-resistance. The device is rated for a maximum drain-source voltage of -30V and a continuous drain current of -7.5A at 25°C. Pulsed drain current capability is -40A.

 

Key electrical characteristics include a typical on-resistance of 19mΩ (maximum 25mΩ) at VGS = -10V and ID = -3.5A. The gate threshold voltage ranges from -1.2V to -2.6V. The device features an ESD diode-protected gate. Input capacitance is typically 875pF, and total gate charge is 18nC.

 

The MOSFET is housed in a surface mount 8-SMD flat lead package (8-ECH). It is RoHS compliant, Pb-Free, and Halogen Free. Typical applications include load switching, protection switches for lithium-ion batteries, and motor drivers.

ECH8315-TL-H Quick Information

Product Type: MOSFET
Canonical Name: ECH8315-TL-H P-Channel Power MOSFET
Subcategory: Power MOSFET

ECH8315-TL-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

ECH8315-TL-H Estimated Pricing

Qty Low High
1+ $1.28 $1.28
10+ $0.80 $0.80
50+ $0.60 $0.60
100+ $0.53 $0.53
500+ $0.41 $0.41
3,000+ $0.32 $0.32
6,000+ $0.30 $0.30

Estimated market price range - modelled values for guidance only, not live distributor offers.

ECH8315-TL-H Features

  • P-Channel MOSFET with -30V drain-source voltage.
  • Continuous drain current rating of -7.5A.
  • Low on-resistance: 25mΩ maximum at 10V gate drive.
  • Surface mount 8-ECH flat lead package.
  • RoHS, Pb-Free, and Halogen Free compliant.

ECH8315-TL-H Applications

  • Ideal for load switching applications.
  • Used in lithium-ion battery protection circuits.
  • Suitable for motor driver designs.

ECH8315-TL-H FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the ECH8315-TL-H?

The maximum drain-source voltage (Vdss) is -30 V.

What is the continuous drain current rating?

The continuous drain current (DC) is -7.5 A at Ta = 25°C.

What is the on-resistance of this MOSFET?

The static drain-source on-resistance is typically 19 mΩ and maximum 25 mΩ at VGS = -10 V and ID = -3.5 A.

What is the gate threshold voltage?

The gate threshold voltage ranges from -1.2 V to -2.6 V at VDS = -10 V and ID = -1 mA.

What package is the ECH8315-TL-H available in?

It is available in an 8-SMD flat lead package (8-ECH) for surface mount mounting.

What is the operating temperature range?

The junction temperature maximum is 150°C, and the storage temperature range is -55°C to +150°C.

Is the ECH8315-TL-H RoHS compliant?

Yes, it is RoHS3 compliant, Pb-Free, and Halogen Free.

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