ECH8310-TL-H P-Channel MOSFET from On Semiconductor, rated for 30V drain-source voltage and 9A continuous drain current. Features low on-resistance of 17mΩ at 10V gate drive.
Mfr Part #:

ECH8310-TL-H

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET from On Semiconductor, rated for 30V drain-source voltage and 9A continuous drain current. Features low on-resistance of 17mΩ at 10V gate drive.
✓ Total Stock: 138,130 pcs
$ Price Range: $0.37 - $1.61

ECH8310-TL-H Available from 1 distributor

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✓ Non-Authorised
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ECH8310-TL-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)

ECH8310-TL-H Description

Short technical summary and product information.

The ECH8310-TL-H is a P-Channel power MOSFET manufactured by On Semiconductor. It is designed for switching applications requiring a drain-source voltage of 30V and continuous drain current of 9A. The device features a low on-resistance of 17mΩ (max) at VGS = -10V and ID = -4.5A, with typical values around 13mΩ. It supports 4V drive capability for low-voltage logic level control.

 

The MOSFET is housed in an 8-pin SOT-28FL/ECH8 surface-mount package with flat leads, suitable for compact PCB designs. It offers fast switching with typical turn-on delay of 10ns and rise time of 45ns. The device is RoHS3 compliant, halogen-free, and Pb-free, meeting environmental standards.

 

Typical applications include load switching, battery protection circuits, and power management in portable electronics. The device has a maximum power dissipation of 1.5W when mounted on a ceramic substrate. Gate charge is 28nC (max) at 10V, enabling efficient gate drive.

ECH8310-TL-H Quick Information

Product Type: P-Channel MOSFET
Series: ECH8310
Canonical Name: On Semiconductor ECH8310-TL-H P-Channel MOSFET
Subcategory: P-Channel MOSFET

ECH8310-TL-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

ECH8310-TL-H Estimated Pricing

Qty Low High
1+ $1.61 $1.61
10+ $1.02 $1.02
50+ $0.76 $0.76
100+ $0.67 $0.67
500+ $0.53 $0.53
3,000+ $0.40 $0.40
6,000+ $0.37 $0.37

Estimated market price range - modelled values for guidance only, not live distributor offers.

ECH8310-TL-H Features

  • P-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current rating of 9A.
  • Low on-resistance of 17mΩ at 10V gate drive.
  • 4V gate drive capability for logic-level control.
  • RoHS3 compliant and halogen-free.

ECH8310-TL-H Applications

  • Ideal for load switching in portable devices.
  • Used in battery protection circuits.
  • Suitable for power management in consumer electronics.
  • Can be used in DC-DC converter applications.

ECH8310-TL-H FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the ECH8310-TL-H?

The maximum drain-source voltage (Vdss) is 30V.

What package does the ECH8310-TL-H come in?

It comes in an 8-SMD, Flat Lead package (SOT-28FL/ECH8).

What is the operating temperature range for the ECH8310-TL-H?

The maximum channel temperature is 150°C, and the storage temperature range is -55°C to +150°C.

Is the ECH8310-TL-H RoHS compliant?

Yes, it is RoHS3 compliant, Pb-Free, and Halogen Free.

What is the on-resistance of the ECH8310-TL-H?

The maximum on-resistance is 17mΩ at VGS=-10V and ID=-4.5A, and 28mΩ at VGS=-4.5V and ID=-2A.

What is the gate threshold voltage of the ECH8310-TL-H?

The gate threshold voltage (Vgs(th)) ranges from -1.2V to -2.6V at VDS=-10V and ID=-1mA.

What is the continuous drain current rating of the ECH8310-TL-H?

The continuous drain current (Id) is 9A at Ta=25°C.

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