| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
48,000 pcs
|
48000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) |
The ECH8309-TL-H is a P-Channel power MOSFET manufactured by On Semiconductor. It is designed for low-voltage switching applications with a maximum drain-source voltage of 12V and continuous drain current of 9.5A at 25°C ambient.
The device features a low on-resistance of 16mOhm maximum at Vgs=4.5V and Id=4.5A, and 53mOhm at Vgs=1.8V and Id=1A, enabling efficient operation at low gate drive voltages. Gate charge is 18nC typical at Vgs=4.5V, and input capacitance is 1780pF typical at Vds=6V. Switching times include turn-on delay of 22ns, rise time of 110ns, turn-off delay of 157ns, and fall time of 123ns.
The MOSFET is housed in an 8-SMD flat lead package (8-ECH) suitable for surface mount assembly. Maximum power dissipation is 1.5W when mounted on a ceramic substrate. Operating junction temperature range is up to 150°C. The device is halogen free and lead free as per datasheet.
Typical applications include load switching, power management in portable devices, and DC-DC converters where low voltage and high efficiency are required. The 1.8V drive capability makes it suitable for battery-powered circuits.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.20 | $0.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 12V.
The continuous drain current (Id) is 9.5A at Ta=25°C.
The maximum on-resistance is 16mOhm at Vgs=4.5V and Id=4.5A.
The device supports gate drive voltages of 1.8V and 4.5V.
The maximum junction temperature is 150°C.
It is available in an 8-SMD flat lead package (8-ECH) for surface mount.
It is listed as RoHS3 compliant, but this status is unverified.